activity
20182021
most citedSilicon carbide stacking-order-induced doping variation in epitaxial graphene

28 citations · 31 across the 3 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci20212 cited

Optimization of epitaxial graphene growth for quantum metrology

Davood Momeni Pakdehi

(See the complete abstract within the thesis in both English and German versions) In this thesis, the process conditions of the epitaxial graphene growth through a socalled polymer…

cond-mat.other20201 cited

Direct Access to Auger recombination in Graphene

Marius Keunecke, David Schmitt, Marcel Reutzel +15

Auger scattering channels are of fundamental importance to describe and understand the non-equilibrium charge carrier dynamics in graphene. While impact excitation increases the nu…

cond-mat.mtrl-sci202028 cited

Silicon carbide stacking-order-induced doping variation in epitaxial graphene

Davood Momeni Pakdehi, Philip Schädlich, T. T. Nhung Nguyen +7

Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substra…

physics.ins-det2019

Traceably Calibrated Scanning Hall Probe Microscopy at Room Temperature

Manuela Gerken, Aurélie Solignac, Davood Momeni Pakdehi +5

Fabrication, characterization and comparison of gold and graphene micro- and nano-size Hall sensors for room temperature scanning magnetic field microscopy applications is presente…

cond-mat.mes-hall2019

Substrate induced nanoscale resistance variation in epitaxial graphene

Anna Sinterhauf, Georg Alexander Traeger, Davood Momeni Pakdehi +8

Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies…

cond-mat.mtrl-sci2018

Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC

Davood Momeni Pakdehi, Klaus Pierz, Stefan Wundrack +9

In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic forc…