activity
20142021
most citedComeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

188 citations · 337 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2021★ 2 cited

Optimization of epitaxial graphene growth for quantum metrology

Davood Momeni Pakdehi

(See the complete abstract within the thesis in both English and German versions) In this thesis, the process conditions of the epitaxial graphene growth through a socalled polymer…

cond-mat.other2020★ 1 cited

Direct Access to Auger recombination in Graphene

Marius Keunecke, David Schmitt, Marcel Reutzel +15

Auger scattering channels are of fundamental importance to describe and understand the non-equilibrium charge carrier dynamics in graphene. While impact excitation increases the nu…

cond-mat.mtrl-sci2020★ 28 cited

Silicon carbide stacking-order-induced doping variation in epitaxial graphene

Davood Momeni Pakdehi, Philip Schädlich, T. T. Nhung Nguyen +7

Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substra…

physics.ins-det2019★ 7 cited

Traceably Calibrated Scanning Hall Probe Microscopy at Room Temperature

Manuela Gerken, Aurélie Solignac, Davood Momeni Pakdehi +5

Fabrication, characterization and comparison of gold and graphene micro- and nano-size Hall sensors for room temperature scanning magnetic field microscopy applications is presente…

cond-mat.mes-hall2019★ 38 cited

Substrate induced nanoscale resistance variation in epitaxial graphene

Anna Sinterhauf, Georg Alexander Traeger, Davood Momeni Pakdehi +8

Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies…

cond-mat.mtrl-sci2018★ 35 cited

Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC

Davood Momeni Pakdehi, Klaus Pierz, Stefan Wundrack +9

In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic forc…

cond-mat.mtrl-sci2017★ 33 cited

Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer

Mattias Kruskopf, Klaus Pierz, Davood Momeni Pakdehi +4

We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation…

cond-mat.mtrl-sci2016★ 188 cited

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

Mattias Kruskopf, Davood Momeni Pakdehi, Klaus Pierz +12

We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducib…

cs.OH2014★ 5 cited

Design and Realization of an S-Band Microwave Low-Noise Amplifier for Wireless RF Subsystems

Ardavan Rahimian, Davood Momeni Pakdehi

This study undertakes the theoretical design, CAD modeling, realization, and performance analysis of a microwave low-noise amplifier (LNA) which has been accurately developed for o…