Optimization of epitaxial graphene growth for quantum metrology

Abstract

(See the complete abstract within the thesis in both English and German versions) In this thesis, the process conditions of the epitaxial graphene growth through a socalled polymer-assisted sublimation growth method are minutely investigated. Atomic force microscopy (AFM) is used to show that the previously neglected flow-rate of the argon process gas has a significant influence on the morphology of the SiC substrate and atop carbon layers. The results can be well explained using a simple model for the thermodynamic conditions at the layer adjacent to the surface. The resulting control option of step-bunching on the sub-nanometer scales is used to produce the ultra-flat, monolayer graphene layers without the bilayer inclusions that exhibit the vanishing of the resistance anisotropy. The comparison of four-point and scanning tunneling potentiometry measurements shows that the remaining small anisotropy represents the ultimate limit, which is given solely by the remaining resistances at the SiC terrace steps. ... The precise control of step-bunching using the Ar flow also enables the preparation of periodic non-identical SiC surfaces under the graphene layer. Based on the work function measurements by Kelvin-Probe force microscopy and X-ray photoemission electron microscopy, it is shown for the first time that there is a doping variation in graphene, induced by a proximity effect of the different near-surface SiC stacks. The comparison of the AFM and low-energy electron microscopy measurements have enabled the exact assignment of the SiC stacks, and the examinations have led to an improved understanding of the surface restructuring in the framework of a step-flow mode. ...

arXiv commentPhD thesis. Keywords: Quantum resistance metrology, epitaxial graphene growth, silicon carbide, resistance anisotropy, argon flow-rate, homogenous quasi-freestanding graphene

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