Correlation between morphology and transport properties of quasi-free-standing monolayer graphene

Abstract

We investigate the morphology of quasi-free-standing monolayer graphene (QFMLG) formed at several temperatures by hydrogen intercalation and discuss its relationship with transport properties. Features corresponding to incomplete hydrogen intercalation at the graphene-substrate interface are observed by scanning tunneling microscopy on QFMLG formed at 600 and 800°C. They contribute to carrier scattering as charged impurities. Voids in the SiC substrate and wrinkling of graphene appear at 1000°C, and they decrease the carrier mobility significantly.

References in corpus (5)

• Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation
• The quasi-free-standing nature of graphene on H-saturated SiC(0001)
• Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene
• Deformation and scattering in graphene over substrate steps
• Increasing the active surface of titanium islands on graphene by nitrogen sputtering

Cited by in corpus (8)

• Li-intercalated Graphene on SiC(0001): an STM study
• Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface
• Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC
• Atomic and Electronic Structure of Si Dangling Bonds in Quasi-Free-Standing Monolayer Graphene
• Revealing the nature of defects in quasi free standing mono-layer graphene on SiC(0001) by means of Density Functional Theory
• Intercalated structures formed by platinum on epitaxial graphene on SiC(0001)
• Optimization of epitaxial graphene growth for quantum metrology
• Intrinsic structural and electronic properties of the Buffer Layer on Silicon Carbide unraveled by Density Functional Theory