Li-intercalated Graphene on SiC(0001): an STM study

Abstract

We present a systematical study via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) on the effect of the exposure of Lithium (Li) on graphene on silicon carbide (SiC). We have investigated Li deposition both on epitaxial monolayer graphene and on buffer layer surfaces on the Si-face of SiC. At room temperature, Li immediately intercalates at the interface between the SiC substrate and the buffer layer and transforms the buffer layer into a quasi-free-standing graphene. This conclusion is substantiated by LEED and STM evidence. We show that intercalation occurs through the SiC step sites or graphene defects. We obtain a good quantitative agreement between the number of Li atoms deposited and the number of available Si bonds at the surface of the SiC crystal. Through STM analysis, we are able to determine the interlayer distance induced by Li-intercalation at the interface between the SiC substrate and the buffer layer.

References in corpus (23)

• Impermeable Atomic Membranes from Graphene Sheets
• Graphene photodetectors for high-speed optical communications
• Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation
• Graphene field effect transistors as room-temperature Terahertz detectors
• Molecular transport through capillaries made with atomic-scale precision
• High-capacity hydrogen storage by metallized graphene
• Evidence for superconductivity in Li-decorated monolayer graphene
• Graphene for terahertz applications
• The mechanism of caesium intercalation of graphene
• Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene
• The Influence of Graphene Curvature on Hydrogen Adsorption: Towards Hydrogen Storage Devices
• Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
• Energy gap opening in submonolayer lithium on graphene: Local density functional and tight-binding calculations
• Hydrogen storage with titanium-functionalized graphene
• Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)
• The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)
• Structural and electronic properties of Li intercalated graphene on SiC(0001)
• Cobalt intercalation at the graphene/iridium(111) interface: influence of rotational domains, wrinkles and atomic steps
• Scalable synthesis of WS2 on graphene and h-BN: an all-2D platform for light-matter transduction
• Increasing the active surface of titanium islands on graphene by nitrogen sputtering
• Carbon rehybridization at the graphene/SiC(0001) interface: Effect on stability and atomic-scale corrugation
• Revealing the multi-bonding state between hydrogen and graphene-supported Ti clusters
• Correlation between morphology and transport properties of quasi-free-standing monolayer graphene

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• Morphology and magneto-transport in exfoliated graphene on ultrathin crystalline \b{eta}-Si3N4(0001)/Si(111)
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