Scalable synthesis of WS2 on graphene and h-BN: an all-2D platform for light-matter transduction

Abstract

By exhibiting a measurable bandgap and exotic valley physics, atomically-thick tungsten disulfide (WS2) offers exciting prospects for optoelectronic applications. The synthesis of continuous WS2 films on other two-dimensional (2D) materials would greatly facilitate the implementation of novel all-2D photoactive devices. In this work we demonstrate the scalable growth of WS2 on graphene and hexagonal boron nitride (h-BN) via a chemical vapor deposition (CVD) approach. Spectroscopic and microscopic analysis reveal that the film is bilayer-thick, with local monolayer inclusions. Photoluminescence measurements show a remarkable conservation of polarization at room temperature peaking 74% for the entire WS2 film. Furthermore, we present a scalable bottom-up approach for the design of photoconductive and photoemitting patterns.

arXiv comment17 pages, 3 Figures in the main text, supplementary information included

References in corpus (14)

• 30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• Extraordinary room-temperature photoluminescence in WS2 monolayers
• Probing Excitonic Dark States in Single-layer Tungsten Disulfide
• Theory of Neutral and Charged Excitons in Monolayer Transition Metal Dichalcogenides
• Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2
• Exciton Binding Energy of Monolayer WS2
• Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles
• Anomalously Robust Valley Polarization and Valley Coherence in Bilayer WS2
• Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene
• Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor
• THz detection with epitaxial graphene field effect transistors on silicon carbide
• Rapid and catalyst-free CVD growth of graphene on hBN

Cited by in corpus (7)

• Epitaxial Growth of 2D Layered Transition Metal Dichalcogenides
• Superlubricity of epitaxial monolayer WS2 on graphene
• Li-intercalated Graphene on SiC(0001): an STM study
• Observation of bright and dark exciton transitions in monolayer MoSe2 by photocurrent spectroscopy
• Deterministic direct growth of WS2 on CVD graphene arrays
• Growth and applications of two-dimensional single crystals
• Local tuning of WS2 photoluminescence using polymeric micro-actuators in a monolithic van der Waals heterostructure