Van Hove Singularity and Lifshitz Transition in Thickness-Controlled Li-Intercalated Graphene

Abstract

We demonstrate a new method to control the Fermi level around the van Hove singularity (VHS) in Li-intercalated graphene on the SiC substrate. By angle-resolved photoemission spectroscopy, we observed a clear Lifshitz transition in the vicinity of the VHS by increasing the graphene thickness. This behavior is unexpected in a free-standing Li-intercalated graphene model. The calculation including the substrate suggests that the surface state stabilizes the Fermi level around the VHS of the Dirac bands via hybridization. In addition, we found that a sizable Schottky barrier is formed between graphene and the substrate. These properties allow us to explore the electronic phase diagram around the VHS by controlling the thickness and electric field in the device condition.

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Cited by in corpus (4)

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• Mass inversion at the Lifshitz transition in monolayer graphene by diffusive, high-density, on-chip, doping
• Direct observation of the electronic structure of even-layer puckered SnTe monolayer films on graphene