Quantum-interference origin and magnitude of 1/$f$ noise in Dirac nodal line IrO${}_2$ nanowires at low temperatures

Abstract

We present 1/$f$ noise measurements of IrO${}_2$ nanowires from 1.7 to 350 K. Results reveal that the noise magnitude (represented by Hooge parameter $\gamma$) increases at low temperatures, indicating low-frequency resistance noise from universal conductance fluctuations. The cause of this noise is determined to be due to oxygen vacancies in the rutile structure of IrO${}_2$. Additionally, the number density of these mobile defects can be calculated from the $\sqrt{T}$ resistance rise caused by the orbital two-channel Kondo effect in the Dirac nodal line metal IrO${}_2$.

arXiv comment5 pages, 4 figures

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Cited by in corpus (1)

• 1/ f noise and two-level systems in MBE-grown Al thin films