High-field 1/f noise in hBN-encapsulated graphene transistors

Abstract

Low-frequency 1/f noise in electronics is a conductance fluctuation, that has been expressed in terms of a mobility "$\alpha$-noise" by Hooge and Kleinpenning. Understanding this noise in graphene is a key towards high-performance electronics. Early investigations in diffusive graphene have pointed out a deviation from the standard Hooge formula, with a modified expression where the free-carrier density is substituted by a constant density $n_{\Delta }\sim 10^{12}\mathrm{c}{\mathrm{m}}^{-2}$. We investigate hBN-encapsulated graphene transistors where high mobility gives rise to the non-linear velocity-saturation regime. In this regime, the $\alpha$-noise is accounted for by substituting conductance by differential conductance $G$, ressulting in a bell-shape dependence of flicker noise with bias voltage $V$. The same analysis holds at larger bias in the Zener regime, with two main differences: the first one is a strong enhancement of the Hooge parameter reflecting the hundred-times larger coupling of interband excitations to the hyperbolic phonon-polariton (HPhP) modes of the mid-infrared Reststrahlen (RS) bands of hBN. The second is an exponential suppression of this coupling at large fields, which we attribute to decoherence effects. We also show that the HPhP bands control the amplitude of flicker noise according to the graphene-hBN thermal coupling estimated with microwave noise thermometry. The phenomenology of $\alpha$-noise in graphene supports a quantum-coherent bremsstrahlung interpretation of flicker noise.

arXiv commentv2, main + SI, added reference to open data on Zenodo repository

References in corpus (15)

• Boron nitride substrates for high-quality graphene electronics
• Graphene on hexagonal boron nitride as a tunable hyperbolic metamaterial
• Review of the Low-Frequency 1/f Noise in Graphene Devices
• Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
• Decoherence and 1/f noise in Josephson qubits
• Tunable light-matter interaction and the role of hyperbolicity in graphene-hBN system
• Out-of-plane heat transfer in van der Waals stacks: electron-hyperbolic phonon coupling
• Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources
• A graphene Zener-Klein transistor cooled by a hyperbolic substrate
• Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride
• Mesoscopic Klein-Schwinger effect in graphene
• Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs
• Hyperbolic Phonon Polariton Electroluminescence as an Electronic Cooling Pathway
• Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene
• Anomalous behavior of 1/f noise in graphene near the charge neutrality point

Cited by in corpus (4)

• Electroluminescence and Energy Transfer Mediated by Hyperbolic Polaritons
• Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures
• Hexagonal boron nitride crystal growth in the Li3BN2-BN system
• Magneto-exciton limit of quantum Hall breakdown in graphene