Impurities as a source of flicker noise in graphene

Abstract

We experimentally study the effect of different scattering potentials on the flicker noise observed in graphene devices on silica substrates. The noise in nominally identical devices is seen to behave in two distinct ways as a function of carrier concentration, changing either monotonically or nonmonotonically. We attribute this to the interplay between long- and short-range scattering mechanisms. Water is found to significantly enhance the noise magnitude and change the type of the noise behaviour. By using a simple model, we show that water is a source of long-range scattering.

4 pages, 4 figures

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• Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene
• Anomalous behavior of 1/f noise in graphene near the charge neutrality point
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• 1/f Flux Noise in low-T${}_c$ SQUIDs due to Superparamagnetic Phase Transitions in Defect Clusters
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• Suppression of 1/f Noise in Near-Ballistic h-BN-Graphene-h-BN Heterostructure Field-Effect Transistors
• Electrical low-frequency $1/f^{\gamma }$ noise due to surface diffusion of scatterers on an ultra low noise graphene platform
• A quantum bound on the 1/f noise in semiconductors with a conical energy-momentum dispersion