Effect of ambient on the resistance fluctuations of graphene

Abstract

In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The shape of the power spectral density of noise was found to be determined by the energetics of the adsorption-desorption of molecules from the graphene surface making it the dominant source of noise in these devices. We also demonstrate a method of quantitatively determining the adsorption energies of chemicals on graphene surface based on noise measurements. We find that the magnitude of noise is extremely sensitive to the nature and amount of the chemical species present. We propose that a chemical sensor based on the measurement of low frequency resistance fluctuations of single layer graphene field effect transistor devices will have extremely high sensitivity, very high specificity, high fidelity and fast response times.

References in corpus (11)

• Electric Field Effect in Atomically Thin Carbon Films
• The Raman Fingerprint of Graphene
• Detection of Individual Gas Molecules Absorbed on Graphene
• Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
• Review of the Low-Frequency 1/f Noise in Graphene Devices
• Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
• Flicker Noise in Bilayer Graphene Transistors
• Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene
• Low frequency random telegraphic noise (RTN) and 1/f noise in the rare-earth manganite Pr${}_{0.63}$Ca${}_{0.37}$MnO${}_3$ near the charge-ordering transition
• Effect of ambient on the resistance fluctuations of graphene
• 1/f noise in graphene

Cited by in corpus (5)

• Effect of ambient on the resistance fluctuations of graphene
• Experimental observation of spin-split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures
• High performance sensors based on resistance fluctuations of single layer graphene transistors
• Hidden electronic phase in strained few-layer 1T-TaS2
• Correlated carrier dynamics in a superconducting van der Waals heterostructure