Hidden electronic phase in strained few-layer 1T-TaS2
arXiv:2112.11680 · doi:10.1103/PhysRevMaterials.5.124003
Abstract
Layered van der Waals materials are exciting as they often host multiple, competing electronic phases. This article reports experimental observation of the co-existence of insulating and metallic phases deep within the commensurate charge density wave phase in high-quality devices of few-layer 1T-TaS2. Through detailed conductance fluctuation spectroscopy of the electronic ground state, we establish that the mixed-phase consists of insulating regions surrounded by one-dimensional metallic domain walls. We show that the electronic ground state of 1T-TaS2 can be affected drastically by strain, eventually leading to the collapse of the Mott gap in the commensurate charge density wave phase. Our study resolves an outstanding question, namely the effect of the inter-layer coupling strength on the electronic phases in layered van der Waals materials.
arXiv comment7 pages, 6 figures
References in corpus (21)
- Ultrafast switching to a stable hidden topologically protected quantum state in an electronic crystal
- Is 1T-TaS a 40 year old quantum spin liquid?
- Memristive phase switching in two-dimensional crystals
- Orbital textures and charge density waves in transition metal dichalcogenides
- Structure and Control of Charge Density Waves in Two-Dimensional 1T-TaS2
- Band insulator to Mott insulator transition in 1T-TaS
- Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS2
- Disrupted orbital order and the pseudo-gap in layered 1T-TaS
- Collapse of layer dimerization in the photo-induced hidden state of 1T-TaS2
- Emergent Novel Metallic State in a Disordered 2D Mott Insulator
- Possible strain induced Mott gap collapse in 1T-TaS
- Nanoscale electromechanical resonators as probes of the charge density wave transition in NbSe
- Effect of ambient on the resistance fluctuations of graphene
- Low frequency random telegraphic noise (RTN) and 1/f noise in the rare-earth manganite PrCaMnO near the charge-ordering transition
- Correlated Non-Gaussian phase fluctuations in LaAlO/SrTiO heterointerface
- High performance sensors based on resistance fluctuations of single layer graphene transistors
- A set-up for measurement of low frequency conductance fluctuation (noise) using digital signal processing techniques
- Quantum phase transition in few-layer NbSe probed through quantized conductance fluctuations
- Probing a spin-glass state in SrRuO3 thin films through higher-order statistics of resistance fluctuations
- Probing defect states in few-layer MoS by conductance fluctuation spectroscopy
- Effect of spin-orbit interaction on the vortex dynamics in LaAlO/SrTiO interfaces near the superconducting transition