Reduction of 1/f Noise in Graphene after Electron-Beam Irradiation

Abstract

We investigated the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reveals an anomalous characteristic - it reduces with increasing concentration of defects induced by irradiation. The increased amount of structural disorder in graphene under irradiation was verified with micro-Raman spectroscopy. The bombardment of graphene devices with 20-keV electrons reduced the noise spectral density, S(I)/I^2 (I is the source-drain current) by an order-of magnitude at the radiation dose of 104 micro-C/cm^2. Our theoretical considerations suggest that the observed noise reduction after irradiation can be more readily explained if the mechanism of 1/f noise in graphene is related to the electron-mobility fluctuations. The obtained results are important for the proposed graphene applications in analog, mixed-signal and radio-frequency systems, integrated circuit interconnects and sensors.

References in corpus (10)

• Ultrahigh electron mobility in suspended graphene
• Detection of Individual Gas Molecules Absorbed on Graphene
• Carrier transport in 2D graphene layers
• Quantum Hall Ferromagnetism in Graphene
• Defect scattering in graphene
• Electronic transport in graphene: A semi-classical approach including midgap states
• Modification of Graphene Properties due to Electron-Beam Irradiation
• Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
• Direct Probing of 1/f Noise Origin with Graphene Multilayers: Surface vs. Volume
• Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene

Cited by in corpus (22)

• Review of the Low-Frequency 1/f Noise in Graphene Devices
• Graphene Composites with Dual Functionality: Electromagnetic Shielding and Thermal Management
• Graphene Versus MoS2: a Short Review
• Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors
• Selective Chemical Vapor Sensing with Few-Layer MoS2 Thin-Film Transistors
• Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates
• Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
• Low-energy electron-irradiation effect on transport properties of graphene field effect transistor
• Understanding the Bias Dependence of Low Frequency Noise in Sin-gle Layer Graphene FETs
• 1/f noise in graphene
• Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors
• Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs
• Limits on the Bolometric response of Graphene due to flicker noise
• Low-Frequency Electronic Noise in Superlattice and Random-Packed Thin Films of Colloidal Quantum Dots
• Low-frequency noise parameter extraction method for single layer graphene FETs
• Effect of boron nitride defects and charge inhomogeneity on 1/f noise in encapsulated graphene
• Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs
• Origin of electrical noise near charge neutrality in dual gated graphene device
• Low-Frequency Noise in Low-Dimensional van der Waals Materials
• Electrical low-frequency $1/f^{\gamma }$ noise due to surface diffusion of scatterers on an ultra low noise graphene platform
• Input referred low-frequency noise analysis for single-layer graphene FETs
• Suppression of 1/f Noise in Near-Ballistic h-BN-Graphene-h-BN Heterostructure Field-Effect Transistors