Input referred low-frequency noise analysis for single-layer graphene FETs

Abstract

The bias-dependence of input referred low-frequency noise (LFN), SVG, is a considerable facet for RF circuit design. SVG was considered constant in silicon transistors but this was contradicted by recent experimental and theoretical studies. In this letter, the behaviour of SVG is investigated for single-layer graphene transistors based on a recently established physics-based complete compact LFN model. A minimum of SVG is recorded at the bias point where maximum transconductance is located which coincides with the peak of the well-known M-shape of the normalized output LFN and the model precisely captures this trend. Mobility fluctuation effect increases SVG towards to lower currents near charge neutrality point (CNP) while carrier number fluctuation and series resistance effects mostly contribute away from CNP; thus, SVG obtains a parabolic shape vs. gate voltage similarly to CMOS devices.

References in corpus (11)

• Review of the Low-Frequency 1/f Noise in Graphene Devices
• Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
• Fast and Sensitive Terahertz Detection Using an Antenna-Integrated Graphene pn Junction
• Low-noise top-gate graphene transistors
• Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources
• Direct Probing of 1/f Noise Origin with Graphene Multilayers: Surface vs. Volume
• Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications
• Reduction of 1/f Noise in Graphene after Electron-Beam Irradiation
• Explicit drain current, charge and capacitance model of graphene field-effect transistors
• Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs
• Low-frequency noise parameter extraction method for single layer graphene FETs