42 citations · 194 across the 15 of their papers we have counts for
15 papers
An extended low-frequency noise compact model for single-layer graphene FETs including correlated mobility fluctuations effect
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, David Jimenez
Correlated mobility fluctuations are considered in the physics-based carrier number fluctuation deltaN low-frequency noise (LFN) compact model of single-layer graphene field effect…
Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs
N. Mavredakis, A. Pacheco-Sanchez, R. Garcia Cortadella +3
For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time…
A Scalable Compact Model for the Static Drain Current of Graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Oihana Txoperena +2
The main target of this article is to propose for the first time a physics-based continuous and symmetric compact model that accurately captures IV experimental dependencies induce…
Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Md Hasibul Alam +5
1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range whe…
Straightforward Bias and Frequency Dependent Small-Signal Model Extraction for Single-Layer Graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Wei Wei +3
We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-s…
Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
Francisco Pasadas, Pedro C. Feijoo, Nikolaos Mavredakis +3
In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical…
An extraction method for mobility degradation and contact resistance of graphene transistors
Anibal Pacheco-Sanchez, Nikolaos Mavredakis, Pedro C. Feijoo +1
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different techn…
Input referred low-frequency noise analysis for single-layer graphene FETs
Nikolaos Mavredakis, David Jimenez
The bias-dependence of input referred low-frequency noise (LFN), SVG, is a considerable facet for RF circuit design. SVG was considered constant in silicon transistors but this was…
Bias-dependent intrinsic RF thermal noise modeling and characterization of single layer graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Paulius Sakalas +4
In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observa…
Charge-Based Compact Model for Bias-Dependent Variability of 1/f Noise in MOSFETs
Nikolaos Mavredakis, Nikolaos Makris, Predrag Habas +1
Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate- to large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, res…
Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs
Nikolaos Mavredakis, Ramon Garcia Cortadella, Xavi Illa +5
Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work. LFN from an adequate statistical sample of long-channel solutio…
Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors
Anibal Pacheco-Sanchez, Nikolaos Mavredakis, Pedro C. Feijoo +4
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of oppo…
Low-frequency noise parameter extraction method for single layer graphene FETs
Nikolaos Mavredakis, Wei Wei, Emiliano Pallecchi +7
In this paper, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single layer (SL) graphene transistors (GFETs) based on a recently establish…
Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs
Nikolaos Mavredakis, Wei Wei, Emiliano Pallecchi +6
Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications dem…
Understanding the Bias Dependence of Low Frequency Noise in Sin-gle Layer Graphene FETs
Nikolaos Mavredakis, Ramon Garcia Cortadella, Andrea Bonaccini Calia +2
This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated gra…