activity
20182021
most citedCharge-Based Compact Model for Bias-Dependent Variability of 1/f Noise in MOSFETs

14 citations · 14 across the 1 of their papers we have counts for

collaborators

6 papers

physics.app-ph2021

Input referred low-frequency noise analysis for single-layer graphene FETs

Nikolaos Mavredakis, David Jimenez

The bias-dependence of input referred low-frequency noise (LFN), SVG, is a considerable facet for RF circuit design. SVG was considered constant in silicon transistors but this was…

cond-mat.mes-hall2021

Bias-dependent intrinsic RF thermal noise modeling and characterization of single layer graphene FETs

Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Paulius Sakalas +4

In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observa…

cond-mat.mes-hall202014 cited

Charge-Based Compact Model for Bias-Dependent Variability of 1/f Noise in MOSFETs

Nikolaos Mavredakis, Nikolaos Makris, Predrag Habas +1

Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate- to large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, res…

cond-mat.mes-hall2020

Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors

Anibal Pacheco-Sanchez, Nikolaos Mavredakis, Pedro C. Feijoo +4

The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of oppo…

cond-mat.mes-hall2019

Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs

Nikolaos Mavredakis, Wei Wei, Emiliano Pallecchi +6

Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications dem…

cond-mat.mes-hall2018

Understanding the Bias Dependence of Low Frequency Noise in Sin-gle Layer Graphene FETs

Nikolaos Mavredakis, Ramon Garcia Cortadella, Andrea Bonaccini Calia +2

This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated gra…