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20182025
most citedCompact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors

42 citations · 194 across the 15 of their papers we have counts for

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physics.app-ph2024★ 11 cited

A Scalable Compact Model for the Static Drain Current of Graphene FETs

Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Oihana Txoperena +2

The main target of this article is to propose for the first time a physics-based continuous and symmetric compact model that accurately captures IV experimental dependencies induce…

physics.app-ph2022★ 42 cited

Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors

Francisco Pasadas, Pedro C. Feijoo, Nikolaos Mavredakis +3

In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical…

physics.app-ph2021

Input referred low-frequency noise analysis for single-layer graphene FETs

Nikolaos Mavredakis, David Jimenez

The bias-dependence of input referred low-frequency noise (LFN), SVG, is a considerable facet for RF circuit design. SVG was considered constant in silicon transistors but this was…

physics.app-ph2020★ 7 cited

Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs

Nikolaos Mavredakis, Ramon Garcia Cortadella, Xavi Illa +5

Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work. LFN from an adequate statistical sample of long-channel solutio…

physics.app-ph2020★ 14 cited

Low-frequency noise parameter extraction method for single layer graphene FETs

Nikolaos Mavredakis, Wei Wei, Emiliano Pallecchi +7

In this paper, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single layer (SL) graphene transistors (GFETs) based on a recently establish…