Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates
arXiv:1508.02578 · doi:10.1063/1.4930992
Abstract
We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO2/Si) along with those on SiO2/Si. We observe that the devices fabricated on h-BN have on average one order of magnitude lower noise amplitude compared with devices fabricated on SiO2/Si. We associate this noise reduction to the lower densities of impurities and trap sites in h-BN than in SiO2. Furthermore, the gate voltage dependent noise amplitude shows a broad maximum at Dirac point for devices on h-BN, in contrast to the M-shaped behavior showing a minimum at Dirac point for devices on SiO2, consistent with the reduced charge inhomogeneity (puddles) for graphene on h-BN. This study demonstrates that the use of h-BN as a substrate or dielectric can be a simple and efficient noise reduction technique valuable for electronic applications of graphene and other nanomaterials.
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- Anomalous behavior of 1/f noise in graphene near the charge neutrality point
- Effect of boron nitride defects and charge inhomogeneity on 1/f noise in encapsulated graphene
- Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs
- Origin of electrical noise near charge neutrality in dual gated graphene device
- Inhomogeneous screening of gate electric field by interface states in graphene FETs