Resistance noise in electrically biased bilayer graphene

Abstract

We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization and screening properties of bilayer graphene.

5 pages, 4 figures

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• Current crowding mediated large contact noise in graphene field-effect transistors
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• Measurement of the Low-Frequency Charge Noise of Bacteria
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