Suppression of 1/f Noise in Near-Ballistic h-BN-Graphene-h-BN Heterostructure Field-Effect Transistors

Abstract

We have investigated low-frequency 1/f noise in the boron nitride - grapheme - boron nitride heterostructure field - effect transistors on Si/SiO2 substrates (f is a frequency). The device channel was implemented with a single layer graphene encased between two layers of hexagonal boron nitride. The transistors had the charge carrier mobility in the range from 30000 to 36000 cm2/Vs at room temperature. It was established that the noise spectral density normalized to the channel area in such devices can be suppressed to 5 x 10^-9 μm2 Hz^-1, which is a factor of x5 - x10 lower than that in non-encapsulated graphene devices on Si/SiO2. The physical mechanism of noise suppression was attributed to screening of the charge carriers in the channel from traps in SiO2 gate dielectric and surface defects. The obtained results are important for the electronic and optoelectronic applications of graphene.

19 pages, 5 figures

References in corpus (13)

• Detection of Individual Gas Molecules Absorbed on Graphene
• Boron nitride substrates for high-quality graphene electronics
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Doping graphene with metal contacts
• Carrier transport in 2D graphene layers
• Quantum transport of massless Dirac fermions in graphene
• Review of the Low-Frequency 1/f Noise in Graphene Devices
• Substrate limited electron dynamics in graphene
• Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
• Selective Chemical Vapor Sensing with Few-Layer MoS2 Thin-Film Transistors
• Direct Probing of 1/f Noise Origin with Graphene Multilayers: Surface vs. Volume
• Flicker Noise in Bilayer Graphene Transistors
• Reduction of 1/f Noise in Graphene after Electron-Beam Irradiation