Counting statistics in an InAs nanowire quantum dot with a vertically coupled charge detector

Abstract

A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as time-resolved charge detection experiments for electron flow through the quantum dot. We demonstrate that the Fano factor describing shot noise or time-correlations in single-electron transport depends in the theoretically expected way on the asymmetry of the tunneling barriers even in a regime where the thermal energy $k_{\mathrm{B}}T$ is comparable to the single-particle level spacing in the dot.

4 pages, 3 figures

References in corpus (21)

• Quantum Computation with Quantum Dots
• Electron transport through double quantum dots
• Driven coherent oscillations of a single electron spin in a quantum dot
• Spin qubits in graphene quantum dots
• Coherent control of a single electron spin with electric fields
• Electron Counting Statistics and Coherent States of Electric Current
• Single-shot readout of an electron spin in silicon
• Spin-orbit qubit in a semiconductor nanowire
• Counting statistics of single-electron transport in a quantum dot
• Full Counting Statistics of Charge Transfer in Coulomb Blockade Systems
• Electric Dipole Induced Spin Resonance in Quantum Dots
• Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires
• Electron-nuclear interaction in 13C nanotube double quantum dots
• Real-time detection of single electron tunneling using a quantum point contact
• Tunable spin-selective loading of a silicon spin qubit
• Spin-Orbit Mediated Control of Spin Qubits
• Time-Resolved Detection of Individual Electrons in a Quantum Dot
• Top-gate defined double quantum dots in InAs nanowires
• Self-aligned charge read-out for InAs nanowire quantum dots
• Coupling symmetry of quantum dot states
• Correlated Counting of Single Electrons in a Nanowire Double Quantum Dot

Cited by in corpus (11)

• Waiting time distributions for the transport through a quantum dot tunnel coupled to one normal and one superconducting lead
• Graphene-based charge sensors
• Coherent and incoherent tunneling into YSR states revealed by atomic scale shot-noise spectroscopy
• Optimization of sample-chip design for stub-matched radio-frequency reflectometry measurements
• Detector-induced backaction on the counting statistics of a double quantum dot
• Full counting statistics in the not-so-long-time limit
• Transport through nanostructures: Finite time vs. finite size
• Scanning tunneling microscopy with InAs nanowire tips
• Back action of graphene charge detectors on graphene and carbon nanotube quantum dots
• Conditional spin counting statistics as a probe of Coulomb interaction and spin-resolved bunching
• Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor