Counting statistics in an InAs nanowire quantum dot with a vertically coupled charge detector

Abstract

A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as time-resolved charge detection experiments for electron flow through the quantum dot. We demonstrate that the Fano factor describing shot noise or time-correlations in single-electron transport depends in the theoretically expected way on the asymmetry of the tunneling barriers even in a regime where the thermal energy $k_{\mathrm{B}}T$ is comparable to the single-particle level spacing in the dot.

4 pages, 3 figures

References in corpus (6)

• Driven coherent oscillations of a single electron spin in a quantum dot
• Spin qubits in graphene quantum dots
• Coherent control of a single electron spin with electric fields
• Spin-Orbit Mediated Control of Spin Qubits
• Coupling symmetry of quantum dot states
• Correlated Counting of Single Electrons in a Nanowire Double Quantum Dot

Cited by in corpus (2)

• Optimization of sample-chip design for stub-matched radio-frequency reflectometry measurements
• Scanning tunneling microscopy with InAs nanowire tips