Bimodal Counting Statistics in Single Electron Tunneling through a Quantum Dot

Abstract

We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain-voltage for several consecutive electron numbers on the quantum dot. For certain configurations we observe super-Poissonian statistics for bias voltages at which excited states become accessible. The associated counting distributions interestingly show a bimodal characteristic. Analyzing the time dependence of the number of electron counts we relate this to a slow switching between different electron configurations on the quantum dot.

References in corpus (7)

• Single-shot read-out of an individual electron spin in a quantum dot
• Full counting statistics of super-Poissonian shot noise in multi-level quantum dots
• Conditional statistics of electron transport in interacting nanoscale conductors
• Transport Statistics of Bistable Systems
• Shot noise in tunneling through a single quantum dot
• Coupling symmetry of quantum dot states
• Non-invasive detection of charge-rearrangement in a quantum dot in high magnetic fields

Cited by in corpus (6)

• Universal oscillations in counting statistics
• Electron counting with a two-particle emitter
• Tunable dynamical channel blockade in double-dot Aharonov-Bohm interferometers
• Spin-induced charge correlations in transport through interacting quantum dots with ferromagnetic leads
• Coulomb-interaction effects in full counting statistics of a quantum-dot Aharonov-Bohm interferometer
• Quantum dynamics in nonequilibrium environments