Shot noise in tunneling through a single quantum dot

Abstract

We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as function of bias voltage. Both effects can be linked to the scanning of the 3-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainly determined by the Fermi function of the emitter electrons. The observed voltage and temperature dependence is compared to the results of a master equation approach.

References in corpus (7)

• Shot Noise in Mesoscopic Conductors
• Shot noise in tunneling transport through molecules and quantum dots
• Shot noise of coupled semiconductor quantum dots
• Magnetic-field-induced singularities in spin dependent tunneling through InAs quantum dots
• Shot noise in self-assembled InAs quantum dots
• Energy Dependence of Quasi-Particle Relaxation in a Disordered Fermi Liquid
• Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

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• Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots
• High-order cumulants in the counting statistics of asymmetric quantum dots
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• Theory of shot noise in single-walled metallic carbon nanotubes weakly coupled to nonmagnetic and ferromagnetic leads
• Fermi Edge Singularities in Transport through Quantum Dots
• Measurement of the shot noise in a single electron transistor
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• Strongly enhanced shot noise in chains of quantum dots
• Shot noise in metallic double dot structures with a negative differential conductance
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• Universal relations between thermoelectrics and noise in mesoscopic transport across a tunnel junction
• Tuning of tunneling current noise spectra singularities by localized states charging