Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

Abstract

We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence experiments on reference samples.

arXiv comment3 pages, 3 figures

References in corpus (3)

• Electro-optical properties of semiconductor quantum dots: Application to quantum information processing
• Magnetic-field-induced singularities in spin dependent tunneling through InAs quantum dots
• Shot noise in self-assembled InAs quantum dots

Cited by in corpus (5)

• Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots
• Shot noise in tunneling through a single quantum dot
• Noise at a Fermi-edge singularity
• Temperature-dependent broadening of coherent current peaks in InAs double quantum dots
• Charge order in an interacting monolayer under transverse bias