Super-Poissonian noise in a Coulomb blockade metallic quantum dot structure

Abstract

The shot noise of the current through a single electron transistor (SET), coupled capacitively with an electronic box, is calculated, using the master equation approach. We show that the noise may be sub-Poissonian or strongly super-Poissonian, depending mainly on the box parameters and the gate. The study also supports the idea that not negative differential conductance, but charge accumulation in the quantum dot, responds for the super-Poissonian noise observed.

4 Pages, 3 Figures

References in corpus (4)

• Shot Noise of a Quantum Shuttle
• Current noise in a vibrating quantum dot array
• Shot noise in tunneling through a single quantum dot
• Shot noise in metallic double dot structures with a negative differential conductance

Cited by in corpus (3)

• Transport and noise in resonant tunneling diode using self-consistent Green function calculation
• Current and Shot Noise Measurements in a Carbon Nanotube-Based Spin Diode
• Current fluctuations of noncollinear single-electron spin-valve transistors