Negative differential resistance due to single-electron switching

Abstract

We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/Al${}_x$O${}_y$ islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.

3 pages, 3 figures; submitted to APL

References in corpus (1)

• Geometrically Induced Multiple Coulomb Blockade Gaps

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