Finite bias charge detection in a quantum dot

Abstract

We present finite bias measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transconductance signal measured in the quantum point contact at finite dot bias shows structure which allows us to determine the time-averaged charge on the dot in the non-blockaded regime and to estimate the coupling of the dot to the leads.

6 pages, 4 figures

References in corpus (8)

• Quantum Computation with Quantum Dots
• Single-shot read-out of an individual electron spin in a quantum dot
• Spin splitting and even-odd effects in carbon nanotubes
• Differential Charge Sensing and Charge Delocalization in a Tunable Double Quantum Dot
• Solving rate equations for electron tunneling via discrete quantum states
• Time-Resolved Detection of Individual Electrons in a Quantum Dot
• In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography
• Multi-terminal transport through a quantum dot in the Coulomb blockade regime

Cited by in corpus (10)

• Quantum dot as thermal rectifier
• Self-aligned charge read-out for InAs nanowire quantum dots
• Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot
• Single electron charging of impurity sites visualized by scanning gate experiments on a quantum point contact
• Coupling symmetry of quantum dot states
• Determination of energy scales in few-electron double quantum dots
• Charge transport through a semiconductor quantum dot-ring nanostructure
• Quantum dot occupation and electron dwell time in the cotunneling regime
• Optomechanical coupling and damping of a carbon nanotube quantum dot
• Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages