Determination of energy scales in few-electron double quantum dots

Abstract

The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately this standard procedure fails for weak and possibly asymmetric tunnel couplings, often the case in realistic devices. We have developed methods to determine the gate voltage to energy conversion accurately in the different regimes of dot-lead tunnel couplings and demonstrate strong variations of the conversion factors. Our concepts can easily be extended to triple quantum dots or even larger arrays.

7 pages, 6 figures

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Cited by in corpus (10)

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• Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers
• Microwave power harvesting using resonator-coupled double quantum dot photodiode
• Transport, shot noise, and topology in AC-driven dimer arrays
• Continuous microwave photon counting by semiconductor-superconductor hybrids
• Monitoring quantum transport: Backaction and measurement correlations
• Capacitively coupled nano conductors: Ratchet currents and exchange fluctuation relations
• Heat pump driven by the shot noise of a tunnel contact
• High-Efficiency Tunable Microwave Photon Detector Based on a Semiconductor Double Quantum Dot Coupled to a Superconducting High-Impedance Cavity