Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers

Abstract

Double quantum dots (DQDs) hold great promise as building blocks for quantum technology as they allow for two electronic states to coherently couple. Defining QDs with materials rather than using electrostatic gating allows for QDs with a hard-wall confinement potential and more robust charge and spin states. An unresolved problem is how to individually address these quantum dots, which is necessary for controlling quantum states. We here report the fabrication of double quantum dot devices defined by the conduction band edge offset at the interface of the wurtzite and zinc blende crystal phases of InAs in nanowires. By using sacrifical epitaxial GaSb markers selectively forming on one crystal phase, we are able to precisely align gate electrodes allowing us to probe and control each QD independently. We hence observe textbook-like charge stability diagrams, a discrete energy spectrum and electron numbers consistent with theoretical estimates and investigate the tunability of the devices, finding that changing the electron number can be used to tune the tunnel barrier as expected by simple band diagram arguments.

arXiv comment5 pages, 3 figures

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• Quantum Fokker-Planck Master Equation for Continuous Feedback Control
• Minimally dissipative information erasure in a quantum dot via thermodynamic length
• Microwave power harvesting using resonator-coupled double quantum dot photodiode
• Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots
• Energetics of microwaves probed by double quantum dot absorption
• Steady-state entanglement production in a quantum thermal machine with continuous feedback control
• Continuous microwave photon counting by semiconductor-superconductor hybrids
• Coherent control of thermoelectric currents and noise in quantum thermocouples
• Dephasing in a crystal-phase defined double quantum dot charge qubit strongly coupled to a high-impedance resonator
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• Quantum Dot Source-Drain Transport Response at Microwave Frequencies
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• Scattering theory of thermal and bipolar thermoelectric diodes
• High-efficiency microwave photodetection by cavity coupled double dots with single cavity-photon sensitivity
• Coherence of an Electronic Two-Level System under Continuous Charge Sensing by a Quantum Dot Detector
• Post-growth shaping and transport anisotropy in 2D InAs nanofins
• Gate control, g-factors and spin orbit energy of p-type GaSb nanowire quantum dot devices