Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering

Abstract

We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with electrons, up to the point where Coulomb oscillations can no longer be resolved, we estimate a lower bound for the ZB-WZ conduction-band offset of 95 meV.

9 pages 9 figures

References in corpus (4)

• Gate capacitance of back-gated nanowire field-effect transistors
• Electronic bands of III-V semiconductor polytypes and their alignment
• GW band structure of InAs and GaAs in the wurtzite phase
• Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots

Cited by in corpus (29)

• Entanglement and thermokinetic uncertainty relations in coherent mesoscopic transport
• Magnetic field independent sub-gap states in hybrid Rashba nanowires
• Thermoelectric power factor limit of a 1D nanowire
• Spectroscopy of the superconducting proximity effect in nanowires using integrated quantum dots
• In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices
• Nonlinear thermoelectric efficiency of superlattice-structured nanowires
• Experimental verification of the work fluctuation-dissipation relation for information-to-work conversion
• Strong coupling between a microwave photon and a singlet-triplet qubit
• Minimally dissipative information erasure in a quantum dot via thermodynamic length
• A Double Quantum Dot Spin Valve
• Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers
• Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates
• Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots
• Electrical control of spins and giant g-factors in ring-like coupled quantum dots
• Tuning the two-electron hybridization and spin states in parallel-coupled InAs quantum dots
• Josephson current via spin and orbital states of a tunable double quantum dot
• Intermediate states in Andreev bound state fusion
• Au-Assisted Substrate-Faceting for Inclined Nanowire Growth
• Imaging the Thermalization of Hot Carriers After Thermionic Emission Over a Polytype Barrier
• Dephasing in a crystal-phase defined double quantum dot charge qubit strongly coupled to a high-impedance resonator
• Spectroscopy of the local density-of-states in nanowires using integrated quantum dots
• Strategy for accurate thermal biasing at the nanoscale
• Quantum Dot Source-Drain Transport Response at Microwave Frequencies
• Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
• Scattering theory of thermal and bipolar thermoelectric diodes
• Spectroscopy and level detuning of few-electron spin states in parallel InAs quantum dots
• Post-growth shaping and transport anisotropy in 2D InAs nanofins
• Selective tuning of spin-orbital Kondo contributions in parallel-coupled quantum dots
• Gate control, g-factors and spin orbit energy of p-type GaSb nanowire quantum dot devices