Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots
arXiv:1504.05031 · doi:10.1103/PhysRevB.91.161301
Abstract
We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we ascribe to single-hole tunneling through a quantum dot in the GaSb core. As the gate voltage increases, the measured charge stability diagram indicates the appearance of an additional quantum dot, which we suggest is an electron quantum dot formed in the InAsSb shell. We find that an electron-hole interaction induces shifts of transport resonances in the source-drain voltage from which an average electron-hole interaction strength of 2.9 meV is extracted. We also carry out magnetotransport measurements of a hole quantum dot in the GaSb core and extract level-dependent g- factors and a spin-orbit interaction.
arXiv comment26 page, 14 figures
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Cited by in corpus (9)
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- Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires
- Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates
- Circular and Linear Photogalvanic Effects in Type-II GaSb/InAs Quantum Well Structures in the Inverted Regime
- Topological energy gaps in the [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires
- Extracting band structure characteristics of GaSb/InAs core-shell nanowires from thermoelectric properties
- Band structure and end states in InAs/GaSb core-shell-shell nanowires
- Gate control, g-factors and spin orbit energy of p-type GaSb nanowire quantum dot devices
- Heavy-hole spin relaxation in quantum dots: Isotropic versus anisotropic effects