Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots

Abstract

We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we ascribe to single-hole tunneling through a quantum dot in the GaSb core. As the gate voltage increases, the measured charge stability diagram indicates the appearance of an additional quantum dot, which we suggest is an electron quantum dot formed in the InAsSb shell. We find that an electron-hole interaction induces shifts of transport resonances in the source-drain voltage from which an average electron-hole interaction strength of 2.9 meV is extracted. We also carry out magnetotransport measurements of a hole quantum dot in the GaSb core and extract level-dependent g- factors and a spin-orbit interaction.

26 page, 14 figures

References in corpus (5)

• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• Spin relaxation and decoherence of holes in quantum dots
• Observation of extremely slow hole spin relaxation in self-assembled quantum dots
• Excitonic condensation in spatially separated one-dimensional systems
• Spin-dependent electronic hybridization in a rope of carbon nanotubes

Cited by in corpus (5)

• Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires
• Circular and Linear Photogalvanic Effects in Type-II GaSb/InAs Quantum Well Structures in the Inverted Regime
• Extracting band structure characteristics of GaSb/InAs core-shell nanowires from thermoelectric properties
• Gate control, g-factors and spin orbit energy of p-type GaSb nanowire quantum dot devices
• Heavy-hole spin relaxation in quantum dots: Isotropic versus anisotropic effects