Silicon Quantum Electronics

Abstract

This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development for both Si quantum devices, and thanks to the physical understanding of quantum effects in silicon. Recent critical steps include the isolation of single electrons, the observation of spin blockade and single-shot read-out of individual electron spins in both dopants and gated quantum dots in Si. Each of these results has come with physics that was not anticipated from previous work in other material systems. These advances underline the significant progress towards the realization of spin quantum bits in a material with a long spin coherence time, crucial for quantum computation and spintronics.

Accepted for publication in Reviews of Modern Physics. 64 pages, 62 figures

References in corpus (242)

• Spintronics: Fundamentals and applications
• Quantum Computation with Quantum Dots
• Quantum Computing
• Spins in few-electron quantum dots
• The Physical Implementation of Quantum Computation
• Electron transport through double quantum dots
• Single-shot read-out of an individual electron spin in a quantum dot
• Driven coherent oscillations of a single electron spin in a quantum dot
• Atomic physics and quantum optics using superconducting circuits
• Coherent control of a single electron spin with electric fields
• Low Temperature Transport through a Quantum Dot: The Anderson Model out of Equilibrium
• Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
• A single-atom electron spin qubit in silicon
• From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor
• Single-shot readout of an electron spin in silicon
• Electronic measurement and control of spin transport in Silicon
• Electron spin coherence exceeding seconds in high purity silicon
• Spin-orbit qubit in a semiconductor nanowire
• Natural and artificial atoms for quantum computation
• The Statistical Theory of Quantum Dots
• Spin relaxation in semiconductor quantum dots
• Control and Detection of Singlet-Triplet Mixing in a Random Nuclear Field
• Triplet-Singlet Spin Relaxation via Nuclei in a Double Quantum Dot
• One-Dimensional Hole Gas in Germanium/Silicon Nanowire Heterostructures
• Circuit Quantum Electrodynamics with a Spin Qubit
• Excitation Spectra of Circular Few-Electron Quantum Dots
• Solid state quantum memory using the 31P nuclear spin
• The Addition Spectrum of a Lateral Dot from Coulomb and Spin Blockade Spectroscopy
• Metal-insulator transition in two-dimensional electron systems
• Electron Spin-Relaxation Times of Phosphorus Donors in Silicon
• Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization
• Universal quantum computation with spin-1/2 pairs and Heisenberg exchange
• Spontaneous Emission Spectrum in Double Quantum Dot Devices
• Charge-qubit operation of an isolated double quantum dot
• Atomically precise placement of single dopants in Si
• Electric Dipole Induced Spin Resonance in Quantum Dots
• Dipole coupling of a double quantum dot to a microwave resonator
• Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires
• Theory of electron spin decoherence by interacting nuclear spins in a quantum dot
• Rapid Single-Shot Measurement of a Singlet-Triplet Qubit
• Charge-based quantum computing using single donors in semiconductors
• Coherent electronic transfer in quantum dot systems using adiabatic passage
• Exchange in silicon-based quantum computer architecture
• Quantum theory for electron spin decoherence induced by nuclear spin dynamics in semiconductor quantum computer architectures: Spectral diffusion of localized electron spins in the nuclear solid-state environment
• Transport spectroscopy of a single dopant in a gated silicon nanowire
• Theory of nuclear induced spectral diffusion: Spin decoherence of phosphorus donors in Si and GaAs quantum dots
• Singlet-triplet spin blockade and charge sensing in a few-electron double quantum dot
• Spin transport and quasi 2D architectures for donor-based quantum computing
• Controllable valley splitting in silicon quantum devices
• Single donor ionization energies in a nanoscale CMOS channel
• Practical design and simulation of silicon-based quantum dot qubits
• Design and proof of concept for silicon-based quantum dot quantum bits
• A fast "hybrid" silicon double quantum dot qubit
• An accurate determination of the Avogadro constant by counting the atoms in a 28Si crystal
• Spin splitting and even-odd effects in carbon nanotubes
• Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits
• Strong Spin-Orbit Interaction and Helical Hole States in Ge/Si Nanowires
• Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach
• Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells
• Charge fluctuation induced dephasing of exchange coupled spin qubits
• Coherent Single Charge Transport in Molecular-Scale Silicon Nanowire Transistors
• Tunable spin-selective loading of a silicon spin qubit
• Valley splitting in strained silicon quantum wells
• Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon
• Electron spin decoherence in isotope-enriched silicon
• Strong coupling of a spin qubit to a superconducting stripline cavity
• Quantum theory of spectral diffusion induced electron spin decoherence
• Valley Polarization in Si(100) at Zero Magnetic Field
• Electrical detection of 31P spin quantum states
• Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
• Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot
• Coherent Control of Rydberg States in Silicon
• Measurement of the Spin Relaxation Time of Single Electrons in a Silicon MOS-Based Quantum Dot
• Theory of valley-orbit coupling in a Si/SiGe quantum dot
• High precision quantum control of single donor spins in silicon
• Dangling-bond spin relaxation and magnetic 1/f noise from the amorphous-semiconductor/oxide interface: Theory
• Dephasing of Si spin qubits due to charge noise
• Strong and Tunable Spin-Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires
• Rashba spin-orbit coupling and spin relaxation in silicon quantum wells
• Hyperfine interactions in silicon quantum dots
• Decoherence of electron spin qubits in Si-based quantum computers
• Physical mechanisms of interface-mediated intervalley coupling in Si
• Interface roughness, valley-orbit coupling and valley manipulation in quantum dots
• Pair-wise decoherence in coupled spin qubit networks
• Monolithic growth of ultra-thin Ge nanowires on Si(001)
• Spin and valley-orbit splittings in SiGe/Si heterostructures
• Valley-based noise-resistant quantum computation using Si quantum dots
• Silicon quantum computation based on magnetic dipolar coupling
• Significant enhancement of hole mobility in [110] silicon nanowires compared to electrons and bulk silicon
• Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot
• Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
• Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins
• Exchange coupling in silicon quantum dots: Theoretical considerations for quantum computation
• Silicon-based Quantum Computation
• Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
• Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot
• Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon
• Spin states of the first four holes in a silicon nanowire quantum dot
• Magnetic field dependence of valley splitting in realistic Si/SiGe quantum wells
• Quantum control of donor electrons at the Si-SiO2 interface
• Efficient multiqubit entanglement via a spin-bus
• Stark Tuning of Donor Electron Spins in Silicon
• Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
• Global control and fast solid-state donor electron spin quantum computing
• Statistics of the Coulomb blockade peak spacings of a silicon quantum dot
• A simple and controlled single electron transistor based on doping modulation in silicon nanowires
• Observation of the single-electron regime in a highly tunable silicon quantum dot
• Single-electron quantum dot in Si/SiGe with integrated charge-sensing
• Electric Field Control of Shallow Donor Impurities in Silicon
• Quantum dot spin qubits in Silicon: Multivalley physics
• Strain effects on silicon donor exchange: Quantum computer architecture considerations
• The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si
• Intervalley coupling for interface-bound electrons in silicon: An effective mass study
• Donor Electron Wave Functions for Phosphorus in Silicon: Beyond Effective Mass Theory
• Room-Temperature Charge Stability Modulated by Quantum Effects in a Nanoscale Silicon Island
• Electron Exchange Coupling for Single Donor Solid-State Qubits
• Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot
• Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy
• Interplay between Zeeman Coupling and Swap Action in Spin-based Quantum Computer Models: Error Correction in Inhomogeneous Magnetic Fields
• Nanoscale broadband transmission lines for spin qubit control
• Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface
• Theory of the Stark Effect for P donors in Si
• Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
• Decoherence induced by anisotropic hyperfine interaction in Si spin qubits
• Electrical detection of spin echoes for phosphorus donors in silicon
• Robust CNOT gates from almost any interaction
• Realizing singlet-triplet qubits in multivalley Si quantum dots
• Resonant tunnelling features in the transport spectroscopy of quantum dots
• Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor
• Orbital Stark effect and quantum confinement transition of donors in silicon
• Charge qubits in semiconductor quantum computer architectures: Tunnel coupling and decoherence
• Spin transitions in a small Si quantum dot
• Hubbard model description of silicon spin qubits: charge stability diagram and tunnel coupling in Si double quantum dots
• Magnetic field dependence of Pauli spin blockade: a window into the sources of spin relaxation in silicon quantum dots
• Electrostically defined few-electron double quantum dot in silicon
• Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy
• Spin filling of valley-orbit states in a silicon quantum dot
• Strong enhancement of the valley splitting in a 2D electron system in silicon
• Shallow donor wavefunctions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach
• Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot
• Dynamically controlled charge sensing of a few-electron silicon quantum dot
• Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors
• Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors
• Single-atom doping for quantum device development in diamond and silicon
• Electronic States in Silicon Quantum Dots: Multivalley Artificial Atoms
• Fabrication and Characterization of Electrostatic Quantum Dots in a Si/SiGe 2D Electron Gas, Including an Integrated Read-out Channel
• Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces
• External field control of donor electron exchange at the Si/SiO2 interface
• Coulomb Blockade in low mobility nanometer size Si:MOSFETs
• Stationary and transient leakage current in the Pauli spin blockade
• Coherent electron transport by adiabatic passage in an imperfect donor chain
• Scheme for direct measurement of a general two-qubit Hamiltonian
• Double-dot charge transport in Si single electron/hole transistors
• Singlet-Triplet Relaxation in Two-electron Silicon Quantum Dots
• Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors
• Theory of Single Electron Spin Relaxation in Si/SiGe Lateral Coupled Quantum Dots
• Two-electron dephasing in single Si and GaAs quantum dots
• Engineered valley-orbit splittings in quantum confined nanostructures in silicon
• Spin blockade in ground state resonance of a quantum dot
• Fast tunnel rates in Si/SiGe one-electron single and double quantum dots
• Tunable Kondo effect in a single donor atom
• Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot
• Effective mass theory of monolayer δ-doping in the high-density limit
• A gate-defined silicon quantum dot molecule
• Quantum non-demolition measurements of single donor spins in semiconductors
• Observation of spin-selective tunneling in SiGe nanocrystals
• Few electron double quantum dot in an isotopically purified ${}^{28}$Si quantum well
• Leakage-current lineshapes from inelastic cotunneling in the Pauli spin blockade regime
• Microwave Assisted Transport in a Single Donor Silicon Quantum Dot
• Gate-induced ionization of single dopant atoms
• Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
• Adiabatic Charge Control in a Single Donor Atom Transistor
• High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces
• Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads
• Effect of an inhomogeneous external magnetic field on a quantum dot quantum computer
• Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon
• Valley splitting of Si/SiGe heterostructures in tilted magnetic fields
• Spin-Lattice Relaxation in Si Quantum Dots
• Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
• Theory of Spin Relaxation in Two-Electron Lateral Coupled Quantum Dots
• Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch
• Charge Sensing in Intrinsic Silicon Quantum Dots
• Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
• Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon
• Single-dopant resonance in a single-electron transistor
• Probe and Control of the Reservoir Density of States in Single-Electron Devices
• Lifetime enhanced transport in silicon due to spin and valley blockade
• Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon
• Fast Non-Adiabatic Two Qubit Gates for the Kane Quantum Computer
• Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
• Singlet-triplet relaxation in multivalley silicon single quantum dots
• Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot
• Non-ideality of quantum operations with the electron spin of a 31P donor in a Si crystal due to interaction with a nuclear spin system
• Valley splitting in Si quantum dots embedded in SiGe
• Joule-assisted silicidation for short-channel silicon nanowire devices
• Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot
• Nuclear magnetic resonance spectrum of 31P donors in silicon quantum computer
• Single ion implantation for single donor devices using Geiger mode detectors
• Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
• Conduction band tight-binding description for silicon applied to phosphorous donors
• Valley Kondo Effect in Silicon Quantum Dots
• Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon
• Precision characterisation of two-qubit Hamiltonians via entanglement mapping
• Quantum control and manipulation of donor electrons in Si-based quantum computing
• Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure
• Spin-dependent scattering in a silicon transistor
• Electron tunnel rates in a donor-silicon single electron transistor hybrid
• Exchange coupling in semiconductor nanostructures: Validity and limitations of the Heitler-London approach
• Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling
• Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures
• A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure
• Optimal control of the silicon-based donor electron spin quantum computing
• Molecular orbital calculations of two-electron states for P donor solid-state spin qubits
• Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots
• Error Rate of the Kane Quantum Computer CNOT Gate in the Presence of Dephasing
• Spin Qubits in Multi-Electron Quantum Dots
• Two-spin relaxation of P-dimers in Silicon
• Mapping donor electron wave function deformations at sub-Bohr orbit resolution
• Optically induced spin to charge transduction in donor spin read-out
• Quantum Dots and Etch-Induced Depletion of a Silicon 2DEG
• Singlet-triplet relaxation in SiGe/Si/SiGe double quantum dots
• Disentangling the exchange coupling of entangled donors in the Si quantum computer architecture
• Voltage Control of Exchange Coupling in Phosphorus Doped Silicon
• Gates for the Kane Quantum Computer in the Presence of Dephasing
• A theoretical investigation into the microwave spectroscopy of a phosphorus-donor charge-qubit in silicon: Coherent control in the Si:P quantum computer architecture
• Valley interference effects on a donor electron close to a Si/SiO2 interface
• Si/SiGe quantum dot with superconducting single-electron transistor charge sensor
• Device fabrication and transport measurements of FinFETs built with ${}^{28}$Si SOI wafers towards donor qubits in silicon
• Simulation of Si:P spin-based quantum computer architecture
• Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
• Multiscale theory of valley splitting
• Effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture
• Coherent transport through a double donor system in silicon
• Cross-talk compensation of hyperfine control in donor qubit architectures
• Valley splitting in a Si/SiGe quantum point contact
• Processing Issues in Top-Down Approaches to Quantum Computer Development in Silicon
• Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots
• Spin-Valley Kondo Effect in Multi-electron Silicon Quantum Dots
• Unconventional Transport in the "Hole" Regime of a Si Double Quantum Dot
• D- shallow donor near a semiconductor-metal and a semiconductor-dielectric interface
• Enhanced Quantum Effects in an Ultra-Small Coulomb Blockaded Device Operating at Room-Temperature
• Silicon in the Quantum Limit: Quantum Computing and Decoherence in Silicon Architectures

Cited by in corpus (595)

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• Cavity-based quantum networks with single atoms and optical photons
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• Time-Domain Multiplexed 2-Dimensional Cluster State: Universal Quantum Computing Platform
• A 10-qubit solid-state spin register with quantum memory up to one minute
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• The germanium quantum information route
• Qubits made by advanced semiconductor manufacturing
• Semiconductor Qubits In Practice
• Universal quantum logic in hot silicon qubits
• Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
• Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
• Universal Quantum Transducers based on Surface Acoustic Waves
• OpenQASM 3: A broader and deeper quantum assembly language
• Coherent spin-qubit photon coupling
• Coherent control of single electrons: a review of current progress
• Quantum decoherence dynamics of divacancy spins in silicon carbide
• A Chirality-Based Quantum Leap
• Resolving catastrophic error bursts from cosmic rays in large arrays of superconducting qubits
• Local and Distributed Quantum Computation
• Nonadiabatic Landau-Zener-Stückelberg-Majorana transitions, dynamics, and interference
• Optical addressing of an individual erbium ion in silicon
• Cryogenic MOS Transistor Model
• Two-axis control of a singlet-triplet qubit with an integrated micromagnet
• Rapid high-fidelity gate-based spin read-out in silicon
• Semiconductor Quantum Computation
• Quantum-Coherent Nanoscience
• Identifying and mitigating charge instabilities in shallow diamond nitrogen-vacancy centers
• Silicon quantum processor with robust long-distance qubit couplings
• The 2021 Quantum Materials Roadmap
• Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch
• Gate fidelity and coherence of an electron spin in a Si/SiGe quantum dot with micromagnet
• Electrically controlling single spin qubits in a continuous microwave field
• Computational advantage of quantum random sampling
• Microwaves in Quantum Computing
• Quantum many-body theory for electron spin decoherence in nanoscale nuclear spin baths
• Quantum Dot Arrays in Silicon and Germanium
• Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
• Probing single electrons across 300 mm spin qubit wafers
• The role of lattice mismatch on the emergence of surface states in 2D hybrid perovskite quantum wells
• Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device
• Low-frequency spin qubit detuning noise in highly purified ${}^{28}$Si/SiGe
• Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
• Noisy intermediate-scale quantum computers
• Spin lifetime and charge noise in hot silicon quantum dot qubits
• The impact of classical control electronics on qubit fidelity
• Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions
• Environmental noise spectroscopy with qubits subjected to dynamical decoupling
• High-fidelity quantum gates in Si/SiGe double quantum dots
• The isolated Heisenberg magnet as a quantum time crystal
• A dual-element, two-dimensional atom array with continuous-mode operation
• Probing quantum devices with radio-frequency reflectometry
• Input-output theory for spin-photon coupling in Si double quantum dots
• Photonics for Neuromorphic Computing: Fundamentals, Devices, and Opportunities
• Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
• Quantum spin transistor with a Heisenberg spin chain
• High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin
• Spin-orbit coupling and operation of multi-valley spin qubits
• Spiderweb array: A sparse spin-qubit array
• Fast coherent manipulation of three-electron states in a double quantum dot
• Coherent transfer of quantum information in silicon using resonant SWAP gates
• Three-electron spin qubits
• Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
• Spatially Resolving Valley Quantum Interference of a Donor in Silicon
• Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout
• High fidelity resonant gating of a silicon based quantum dot hybrid qubit
• Heavy hole states in Germanium hut wires
• Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction
• Donor spins in silicon for quantum technologies
• Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
• Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/Si${}_x$Ge${}_{1-x}$ quantum dot
• High Resolution Valley Spectroscopy of Si Quantum Dots
• Simulating Quantum Materials with Digital Quantum Computers
• Optimized cavity-mediated dispersive two-qubit gates between spin qubits
• Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot
• Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
• Auto-tuning of double dot devices in situ with machine learning
• Spin decoherence of magnetic atoms on surfaces
• Automated tuning of inter-dot tunnel couplings in quantum dot arrays
• Spin relaxation in a Si quantum dot due to spin-valley mixing
• Blueprint of a scalable spin qubit shuttle device for coherent mid-range qubit transfer in disordered Si/SiGe/SiO${}_2$
• Quantum probe hyperpolarisation of molecular nuclear spins
• Adequacy of Si:P Chains as Fermi-Hubbard Simulators
• Electrical manipulation of semiconductor spin qubits within the g-matrix formalism
• Engineering interfacial quantum states and electronic landscapes by molecular nanoarchitectures
• Single electrons on solid neon as a solid-state qubit platform
• Single-shot readout and relaxation of singlet/triplet states in exchange-coupled ${}^{31}$P electron spins in silicon
• Optimal quantum networks and one-shot entropies
• Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
• Single-shot single-gate RF spin readout in silicon
• Genetic Design of Enhanced Valley Splitting towards a Spin Qubit in Silicon
• Realization of efficient quantum gates with a superconducting qubit-qutrit circuit
• Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
• Site-selective quantum control in an isotopically enriched 28Si/SiGe quadruple quantum dot
• The Quantum Socket: Three-Dimensional Wiring for Extensible Quantum Computing
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• Harnessing the Quantum Behavior of Spins on Surfaces
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• Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot
• Valley splitting of single-electron Si MOS quantum dots
• Topological phases of a dimerized Fermi-Hubbard model for semiconductor nano-lattices
• Electric-field control and noise protection of the flopping-mode spin qubit
• Shuttling an electron spin through a silicon quantum dot array
• Spin Relaxation due to Charge Noise
• Disorder-induced valley-orbit hybrid states in Si quantum dots
• Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
• Low charge noise quantum dots with industrial CMOS manufacturing
• Entangling distant resonant exchange qubits via circuit quantum electrodynamics
• Coherent long-distance spin-qubit-transmon coupling
• Single-shot readout of hole spins in Ge
• Algorithmic simulation of far-from-equilibrium dynamics using quantum computer
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• Adiabatic many-body state preparation and information transfer in quantum dot arrays
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• In-situ Tuning of the Electric Dipole Strength of a Double Dot Charge Qubit: Charge Noise Protection and Ultra Strong Coupling
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• Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation
• Hyperfine Stark effect of shallow donors in silicon
• The SMART protocol -- Pulse engineering of a global field for robust and universal quantum computation
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• Navigating the 16-dimensional Hilbert space of a high-spin donor qudit with electric and magnetic fields
• Impurity-assisted electric control of spin-valley qubits in monolayer MoS${}_2$
• Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots
• Annealing shallow Si/SiO${}_2$ interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors
• Phonon-Mediated Decay of Singlet-Triplet Qubits in Double Quantum Dots
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• Anisotropic Pauli spin blockade in hole quantum dots
• Coupling of three-spin qubits to their electric environment
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• Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
• The formation of nonequilibrium steady states in interacting double quantum dots: When coherences dominate the charge distribution
• Time-dependent quantum transport: causal superfermions, exact fermion-parity protected decay mode, and Pauli exclusion principle for mixed quantum states
• Randomized benchmarking of barrier versus tilt control of a singlet-triplet qubit
• Coherent Control of the Fine-Structure Qubit in a Single Alkaline-Earth Atom
• Efficient orthogonal control of tunnel couplings in a quantum dot array
• Semiconductor materials stacks for quantum dot spin qubits
• Two-qubit logic with anisotropic exchange in a fin field-effect transistor
• A two-dimensional array of single-hole quantum dots
• Hybrid spin and valley quantum computing with singlet-triplet qubits
• Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor
• Control of valley dynamics in silicon quantum dots in the presence of an interface step
• Variability of electron and hole spin qubits due to interface roughness and charge traps
• Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon
• All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing
• Two-Qubit Couplings of Singlet-Triplet Qubits Mediated by One Quantum State
• Room temperature manipulation of long lifetime spins in metallic-like carbon nanospheres
• Non-Abelian Braiding of Chiral Majorana Fermions by Quantum Dots
• SiGe quantum dots for fast hole spin Rabi oscillations
• Spatial noise correlations beyond nearest-neighbor in ${}^{28}$Si/SiGe spin qubits
• An Exchange-Coupled Donor Molecule in Silicon
• Protocol for a resonantly-driven three-qubit Toffoli gate with silicon spin qubits
• The asymmetric resonant exchange qubit under the influence of electrical noise
• Network architecture for a topological quantum computer in silicon
• Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels
• Low disorder and high valley splitting in silicon
• Real-time observation of Cooper pair splitting showing strong non-local correlations
• Spin-lattice relaxation times of single donors and donor clusters in silicon
• Strong influence of spin-orbit coupling on magnetotransport in two-dimensional hole systems
• Quadrupolar and anisotropy effects on dephasing in two-electron spin qubits in GaAs
• Quantum Computing with Acceptor Spins in Silicon
• The critical role of substrate disorder in valley splitting in Si quantum wells
• Controllable freezing of the nuclear spin bath in a single-atom spin qubit
• Coulomb-mediated antibunching of an electron pair surfing on sound
• Extended Hubbard model for mesoscopic transport in donor arrays in silicon
• Nonlinear response and crosstalk of electrically driven silicon spin qubits
• The Reservoir Learning Power across Quantum Many-Boby Localization Transition
• A quadrupolar exchange-only spin qubit
• Superconducting quantum point contact with split gates in the two dimensional LaAlO3/SrTiO3 superfluid
• Charge dynamics and spin blockade in a hybrid double quantum dot in silicon
• Quantum walks of interacting fermions on a cycle graph
• Long-distance entangling gates between quantum dot spins mediated by a superconducting resonator
• Is all-electrical silicon quantum computing feasible in the long term?
• Strong coupling between a microwave photon and a singlet-triplet qubit
• Radio frequency reflectometry in silicon-based quantum dots
• Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor
• Spin-orbit dynamics of single acceptor atoms in silicon
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• Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon
• Probing resonating valence bonds on a programmable germanium quantum simulator
• A silicon-based single-electron interferometer coupled to a fermionic sea
• Electromagnetic control of valley splitting in ideal and disordered Si quantum dots
• General framework for transport in spin-orbit-coupled superconducting heterostructures: Nonuniform spin-orbit coupling and spin-orbit-active interfaces
• Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate
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• Cornertronics in Two-Dimensional Second-Order Topological Insulators
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• Fast high-fidelity entangling gates for spin qubits in Si double quantum dots
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• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
• Echo trains in pulsed electron spin resonance of a strongly coupled spin ensemble
• Single-shot readout of a driven hybrid qubit in a GaAs double quantum dot
• Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit
• Charge State Hysteresis in Semiconductor Quantum Dots
• Quantum interferometry with a g-factor-tunable spin qubit
• Long distance coupling of resonant exchange qubits
• Interplay of charge noise and coupling to phonons in adiabatic electron transfer between quantum dots
• Hybrid superconductor-semiconductor systems for quantum technology
• Correlated spectrum of distant semiconductor qubits coupled by microwave photons
• Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot
• Ray-based framework for state identification in quantum dot devices
• Single-electron Transport in Graphene-like Nanostructures
• Deep Learning-Guided Surface Characterization for Autonomous Hydrogen Lithography
• The exchange-only singlet-only spin qubit
• Adiabatic electron charge transfer between two quantum dots in presence of 1/f noise
• Ultrafast optical nanoscopy of carrier dynamics in silicon nanowires
• Thermoelectric response of a correlated impurity in the nonequilibrium Kondo regime
• Decoherence of a Driven Qubit
• Two-body Wigner molecularization in asymmetric quantum dot spin qubits
• Palladium gates for reproducible quantum dots in silicon
• A singlet-triplet hole-spin qubit in MOS silicon
• Deep reinforcement learning for universal quantum state preparation via dynamic pulse control
• Electric-field tuning of the valley splitting in silicon corner dots
• Analytically parameterized solutions for robust quantum control using smooth pulses
• Anisotropic hyperfine interaction of surface-adsorbed single atoms
• Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers
• Parallel detection and spatial mapping of large nuclear spin clusters
• Radio frequency reflectometry and charge sensing of a precision placed donor in silicon
• Do micromagnets expose spin qubits to charge and Johnson noise?
• Highly tuneable hole quantum dots in Ge-Si core-shell nanowires
• Braiding and fusion of non-Abelian vortex anyons
• Atomic-level Characterisation of Quantum Computer Arrays by Machine Learning
• Measurements of capacitive coupling within a quadruple quantum dot array
• Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits
• Magnetic Gradient Fluctuations from Quadrupolar ${}^{73}$Ge in Si/SiGe Exchange-Only Qubits
• Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot
• Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon
• Linear scaling approach for atomistic calculation of excitonic properties of 10-million-atom nanostructures
• Valley two-qubit system in a MoS${}_2$-monolayer gated double quantum dot
• Controlling Synthetic Spin-Orbit Coupling in a Silicon Quantum Dot with Magnetic Field
• Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability
• Two-Qubit Pulse Gate for the Three-Electron Double Quantum Dot Qubit
• Spin-Degenerate Regimes for Single Quantum Dots in Transition Metal Dichalcogenide Monolayers
• Quantum process tomography of a controlled-phase gate for time-bin qubits
• Passivation and characterization of charge defects in ambipolar silicon quantum dots
• Noise-compensating pulses for electrostatically controlled silicon spin qubits
• A fabrication guide for planar silicon quantum dot heterostructures
• Acoustic Traps and Lattices for Electrons in Semiconductors
• Switching between relaxation hotspots and coldspots in disordered spin qubits
• Enhanced Valley Splitting in Si Layers with Oscillatory Ge Concentration
• Ambipolar quantum dots in intrinsic silicon
• A linear triple quantum dot system in isolated configuration
• Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies
• CMOS on-chip thermometry at deep cryogenic temperatures
• Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder
• Single rare-earth ions as atomic-scale probes in ultra-scaled transistors
• Universal quantum computing using electro-nuclear wavefunctions of rare-earth ions
• Spin decoherence in a two-qubit CPHASE gate: the critical role of tunneling noise
• Optimizing surface defects for atomic-scale electronics: Si dangling bonds
• Nanosecond-timescale spin transfer using individual electrons in a quadruple-quantum-dot device
• Environmental noise effects on entanglement fidelity of exchange-coupled semiconductor spin qubits
• Single-charge detection by an atomic precision tunnel junction
• Quantum dots with split enhancement gate tunnel barrier control
• Dynamics of entanglement of two electron spins interacting with nuclear spin baths in quantum dots
• Fault-Tolerant Quantum Computation for Singlet-Triplet Qubits with Leakage Errors
• A Quantum von Neumann Architecture for Large-Scale Quantum Computing
• Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit
• Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures
• Transporting a single-spin qubit through a double quantum dot
• Impact of valley phase and splitting on readout of silicon spin qubits
• Intrinsic decoherence in isolated quantum systems
• Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor
• Shallow unitary decompositions of quantum Fredkin and Toffoli gates for connectivity-aware equivalent circuit averaging
• Interface and electromagnetic effects in the valley splitting of Si quantum dots
• Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
• Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon
• Roadmap on Atomic-scale Semiconductor Devices
• CMOS Quantum Computing: Toward A Quantum Computer System-on-Chip
• Charge pumping under spin resonance in Si(100) metal-oxide-semiconductor transistors
• Capacitively coupled singlet-triplet qubits in the double charge resonant regime
• Charge fluctuations in nonlinear heat transport
• Optimized micromagnet geometries for Majorana zero modes in low g-factor materials
• Parallel entangling gate operations and two-way quantum communication in spin chains
• Molecular formations and spectra due to electron correlations in three-electron hybrid double-well qubits
• High-Fidelity Entangling Gates for Quantum-Dot Hybrid Qubits Based on Exchange Interactions
• Negative exchange interactions in coupled few-electron quantum dots
• Tunneling statistics for analysis of spin-readout fidelity
• Reconfigurable quadruple quantum dots in a silicon nanowire transistor
• Long-Range Interaction between Charge and Spin Qubits in Quantum Dots
• Spatially resolved resonant tunneling on single atoms in silicon
• An automated approach for consecutive tuning of quantum dot arrays
• Highly tunable exchange-only singlet-only qubit in a GaAs triple quantum dot
• Spin dynamics in quantum dots on liquid helium
• Entanglement generation using a controlled-phase gate for time-bin qubits
• Characterizing temperature and strain variations with qubit ensembles for their robust coherence protection
• Donor Wavefunctions in Si Gauged by STM Images
• High-Fidelity Spin Measurement on the Nitrogen-Vacancy Center
• Disorder-dressed quantum evolution
• Crosstalk analysis for simultaneously driven two-qubit gates in spin qubit arrays
• High Fidelity Singlet-Triplet $S$-$T_{-}$ Qubits in Inhomogeneous Magnetic Fields
• Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry
• Cryogen-free scanning gate microscope for the characterization of Si/Si${}_{0.7}$Ge${}_{0.3}$ quantum devices at milli-Kelvin temperatures
• Classification and magic magnetic-field directions for spin-orbit-coupled double quantum dots
• Wafer-scale fabrication and room-temperature experiments on graphene-based gates for quantum computation
• Programmable two-qubit gates in capacitively coupled flopping-mode spin qubits
• A high-sensitivity charge sensor for silicon qubits above one kelvin
• Predictive coupled-cluster isomer orderings for some Si${}_n$C${}_m$ ($m,n\le 12$) clusters; A pragmatic comparison between DFT and complete basis limit coupled-cluster benchmarks
• Valley Phase and Voltage Control of Coherent Manipulation in Si Quantum Dots
• Spin-orbit enhancement in Si/SiGe heterostructures with oscillating Ge concentration
• Cavity-mediated entanglement of parametrically driven spin qubits via sidebands
• Nuclear spin readout in a cavity-coupled hybrid quantum dot-donor system
• Protecting solid-state spins from strongly coupled environment
• Wigner molecules and hybrid qubits
• Quantum Wigner molecules in moiré materials
• Microwave-frequency scanning gate microscopy of a Si/SiGe double quantum dot
• High fidelity ac gate operations of the quantum dot hybrid qubit
• Isotopic enrichment of silicon by high fluence ${}^{28}$Si${}^{-}$ ion implantation
• Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots
• SpinQ: Compilation strategies for scalable spin-qubit architectures
• Interacting holes in Si and Ge double quantum dots: from a multiband approach to an effective-spin picture
• Coherent spin transport through helical edge states of topological insulator
• Influence of interface potential on the effective mass in Ge nanostructures
• Valley blockade and multielectron spin-valley Kondo effect in silicon
• Transport through an impurity tunnel coupled to a Si/SiGe quantum dot
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Electric dipole spin resonance in systems with a valley dependent g-factor
• Optimized Coplanar Waveguide Resonators for a Superconductor-Atom Interface
• Entanglement entropy scaling in solid-state spin arrays via capacitance measurements
• Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
• Scalable on-chip multiplexing of silicon single and double quantum dots
• Interplay of exchange and superexchange in triple quantum dots
• Superconducting MoSi nanowires
• High-precision real-space simulation of electrostatically-confined few-electron states
• Decoherence induced by a sparse bath of two-level fluctuators: peculiar features of $1/f$ noise in high-quality qubits
• Modelling of spin decoherence in a Si hole qubit perturbed by a single charge fluctuator
• Indications of a soft cutoff frequency in the charge noise of a Si/SiGe quantum dot spin qubit
• Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon
• Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations
• Inverted Singlet-Triplet Qubit Coded on a Two-Electron Double Quantum Dot
• Gigahertz Single-Electron Pumping Mediated by Parasitic States
• Coulomb interaction and valley-orbit coupling in Si quantum dots
• Origin of giant valley splitting in silicon quantum wells induced by superlattice barriers
• A sparse spin qubit array with integrated control electronics
• Keeping a spin qubit alive in natural silicon: Comparing optimal working points and dynamical decoupling
• Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells
• Theory of box-model hyperfine couplings and transport signatures of long-range nuclear-spin coherence in a quantum-dot spin valve
• Optical orientation of electron spins and valence band spectroscopy in germanium
• Neural network based deep learning analysis of semiconductor quantum dot qubits for automated control
• Valley splitting in silicon from the interference pattern of quantum oscillations
• Measurement of tunnel coupling in a Si double quantum dot based on charge sensing
• A Review on Quantum Computing: Qubits, Cryogenic Electronics and Cryogenic MOSFET Physics
• Valley-Free Silicon Fins Caused by Shear Strain
• Anisotropic $g$-tensors in hole quantum dots: The role of the transverse confinement direction
• Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
• Genuine multipartite entanglement in a one-dimensional Bose-Hubbard model with frustrated hopping
• A low-disorder Metal-Oxide-Silicon double quantum dot
• Induced quantum dot probe for material characterization
• Equilibration in closed quantum systems: Application to spin qubits
• Ionic Charge Distributions in Silicon Atomic Wires
• Valley splitting depending on the size and location of a silicon quantum dot
• Control of the ionization state of 3 single donor atoms in silicon
• Single-charge occupation in ambipolar quantum dots
• Magnetic degeneracy points in interacting two-spin systems: geometrical patterns, topological charge distributions, and their stability
• Theory of valley-resolved spectroscopy of a Si triple quantum dot coupled to a microwave resonator
• Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
• Wigner-molecule supercrystal in transition-metal dichalcogenide moiré superlattices: Lessons from the bottom-up approach
• Valleytronic full configuration-interaction approach: An application to the excitation spectra of Si double-dot qubits
• Dynamics of the Anderson impurity model: benchmarking a non-adiabatic exchange-correlation potential in time-dependent density functional theory
• Two-qubit CZ gates robust against charge noise in silicon while compensating for crosstalk using neural network
• Few-electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas
• Coupled vertical double quantum dots at single-hole occupancy
• Theory of single and two-qubit operations with donor-bound electron spins in germanium
• Dynamics of two coupled semiconductor spin qubits in a noisy environment
• Statistical exchange-coupling errors and the practicality of scalable silicon donor qubits
• Interface effects on acceptor qubits in silicon and germanium
• Simple operation sequences to couple and interchange quantum information between spin qubits of different kinds
• Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane
• Calculation of tunnel-couplings in open gate-defined disordered quantum dot systems
• Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises
• Level anticrossing effect in single-level or multilevel double quantum dots: Electrical conductance, zero-frequency charge susceptibility and Seebeck coefficient
• Spin-Orbit Qubit on a Multiferroic Insulator in a Superconducting Resonator
• Nitrogen in Silicon for Room Temperature Single Electron Tunneling Devices
• Host isotope mass effects on the hyperfine interaction of group-V donors in silicon
• Dynamical mean-field approach to disordered interacting systems and applications to quantum transport problem
• Decoherence of two coupled singlet-triplet spin qubits
• Designing globally optimal entangling gates using geometric space curves
• Probing the Jaynes-Cummings Ladder with Spin Circuit Quantum Electrodynamics
• Optical Control of Donor Spin Qubits in Silicon
• Hole weak anti-localization in a strained-Ge surface quantum well
• Democratizing Spin Qubits
• Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes
• Self assembled Wigner crystals as mediators of spin currents and quantum information
• Possible hundredfold enhancement in the direct magnetic coupling of a single atomic spin to a circuit resonator
• Direct measurement of electron intervalley relaxation in a Si/SiGe quantum dot
• Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator
• Theoretical Prediction of Enhanced Thermopower in n-doped Si/Ge Superlattices using Effective Mass Approximation
• Interaction between interface and massive states in multivalley topological heterostructures
• Exchange interaction between two quantum dots coupled through a superconducting island
• Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories
• Scanned single-electron probe inside a silicon electronic device
• Fast high-fidelity single-qubit gates for flip-flop qubits in silicon
• Theory of Valley Splitting in Si/SiGe Spin-Qubits: Interplay of Strain, Resonances and Random Alloy Disorder
• Enhanced quantum state preparation via stochastic prediction of neural network
• Quadrupolar interactions between acceptor pairs in p-doped semiconductors
• Line Shapes of Electric Dipole Spin Resonance in Pauli Spin Blockade
• ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon
• Nuclear spin decoherence of neutral ${}^{31}$P donors in silicon: Effect of environmental ${}^{29}$Si nuclei
• Protected Solid-State Qubits
• Dephasing of planar Ge hole spin qubits due to 1/$\text{f}$ charge noise
• The importance of second order deformation potentials in modeling of InAs/GaAs nanostructures
• A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures
• Near-Term Spin-Qubit Architecture Design via Multipartite Maximally-Entangled States
• Quantum Simulation and Optimization in Hot Quantum Networks
• Anisotropy with respect to the applied magnetic field of spin qubit decoherence times
• Pairwise quantum correlations in four-level quantum dot systems
• Designing high-fidelity multi-qubit gates for semiconductor quantum dots through deep reinforcement learning
• Engineering local strain for single-atom nuclear acoustic resonance in silicon
• Designing arbitrary single-axis rotations robust against perpendicular time-dependent noise
• Hyperfine-assisted fast electric control of dopant nuclear spins in semiconductors
• Passive and active suppression of transduced noise in silicon spin qubits
• Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy
• Theory of Silicon Spin Qubit Relaxation in a Synthetic Spin-Orbit Field
• Acceptor-based qubit in silicon with tunable strain
• Electric control of tunneling energy in graphene double dots
• Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures
• Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
• π-Conjugation in Epitaxial Si(111)-($\sqrt{3}$$\times$$\sqrt{3}$) Surface: an Unconventional "Bamboo Hat" Bonding Geometry for Si
• Theory of multi-dimensional quantum capacitance and its application to spin and charge discrimination in quantum-dot arrays
• Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit
• Coherent transfer of singlet-triplet qubit states in an architecture of triple quantum dots
• Time independent quantum circuits with local interactions
• Universal quantum computation with symmetric qubit clusters coupled to an environment
• beSnake: A routing algorithm for scalable spin-qubit architectures
• Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon
• Integrated multiplexed microwave readout of silicon quantum dots in a cryogenic CMOS chip
• Phonon-induced decoherence of a charge quadrupole qubit
• Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
• Tunable p-n junction barriers in few-electron bilayer graphene quantum dots
• Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations
• Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots
• Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot
• High-fidelity CNOT gate for spin qubits with asymmetric driving using virtual gates
• Defects in Silicon Carbide as Quantum Qubits: Recent Advances in Defect Engineering
• Fabrication of quantum dots in undoped Si/Si${}_{0.8}$Ge${}_{0.2}$ heterostructures using a single metal-gate layer
• Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices
• Spin-orbit coupling induced two-electron relaxation in silicon donor pairs
• Path integral simulation of exchange interactions in CMOS spin qubits
• Compressed Optimization of Device Architectures (CODA) for semiconductor quantum devices
• Fast noise-resistant control of donor nuclear spin qubits in silicon
• Optimisation of electrically-driven multi-donor quantum dot qubits
• The origins of noise in the Zeeman splitting of spin qubits in natural-silicon devices
• Heitler-London model for acceptor-acceptor interactions in doped semiconductors
• Non-destructive X-ray imaging of patterned delta-layer devices in silicon
• Electron qubits surfing on acoustic waves: review of recent progress
• Pauli spin blockade with site-dependent g-tensors and spin-polarized leads
• The superconducting circuit companion -- an introduction with worked examples
• A compact and versatile cryogenic probe station for quantum device testing
• Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography
• Electronic transport in Si:P delta-doped wires
• Hybrid Exchange Measurement-Based Qubit Operations in Semiconductor Double Quantum Dot Qubits
• Magnetic field induced charge redistribution in disordered graphene double quantum dots
• Gate-based spin readout of hole quantum dots with site-dependent $g-$factors
• Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems
• Coherent coupling between a quantum dot and a donor in silicon
• Excited states of defect lines in silicon: A first-principles study based on hydrogen cluster analogues
• High-Fidelity Entangling Gates for Electron and Nuclear Spin Qubits in Diamond
• Hydrogenic Spin-Valley states of the Bromine donor in 2H-MoTe${}_2$
• Dissipation and gate timing errors in SWAP operations of qubits
• Highly tunable 2D silicon quantum dot array with coupling beyond nearest neighbors
• Valley splitting by extended zone effective mass approximation incorporating strain in silicon
• Measurements and atomistic theory of electron $g$ factor anisotropy for phosphorus donors in strained silicon
• Long range entanglement in quantum dot systems under the Fermi-Hubbard approach
• Electronic Wigner-Molecule Polymeric Chains in Elongated Silicon Quantum Dots and Finite-Length Quantum Wires
• Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium
• Leveraging Off-the-Shelf Silicon Chips for Quantum Computing
• Quantum estimation and remote charge sensing with a hole-spin qubit in silicon
• Impurity-driven intervalley spin-flip scattering-induced 2D spin relaxation in silicon
• Anisotropy of spin coherence in high mobility quantum wells with arbitrary magnetic fields
• 2-dimensional semiconductors pave the way towards dopant based quantum computing
• Nanoscale addressing and manipulation of neutral atoms using electromagnetically induced transparency
• Spin relaxation of a donor electron coupled to interface states
• Entangled Photon-Pair Emission in Waveguide Circuit QED from a Cooper Pair Splitter
• Experimental online quantum dots charge autotuning using neural networks
• Shape and coarsening dynamics of strained islands
• Annual-modulation fingerprint of the axion wind induced sideband triplet in quantum dot spin qubit sensors
• Equivalent Resistance from the Quantum to the Classical Transport Limit
• The formation of a nuclear-spin dark state in silicon
• Hyperfine-assisted decoherence of a phosphorus nuclear-spin qubit in silicon
• Leakage and dephasing in ${}^{28}$Si-based exchange-only spin qubits
• Automatic Detection of Nuclear Spins at Arbitrary Magnetic Fields via Signal-to-Image AI Model
• Integrated information storage and transfer with a coherent magnetic device
• The Role of Quantum Computing in Advancing Scientific High-Performance Computing: A perspective from the ADAC Institute
• Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
• Prediction of the spin triplet two-electron quantum dots in Si: towards controlled quantum simulations of magnetic systems
• Preparation and Readout of Multielectron High-Spin States in a Gate-Defined GaAs/AlGaAs Quantum Dot
• Two-qubit logical operations in three quantum dots system
• Natural and bionic neuronal membranes: possible sites for quantum biology
• Two-qubit sweet spots for capacitively coupled exchange-only spin qubits
• Low Temperature Relaxation of Donor Bound Electron Spins in ${}^{28}$Si:P
• Characterization of Tunnel Diode Oscillator for Qubit Readout Applications
• Minimal evolution times for fast, pulse-based state preparation in silicon spin qubits
• Observation of the symmetry of core states of a single Fe impurity in GaAs
• Signatures of Valley Kondo Effect in Si/SiGe Quantum Dots
• Efficient adaptive Bayesian estimation of a slowly fluctuating Overhauser field gradient
• Physical approach to quantum networks with massive particles
• Error Mitigation in Quantum Computers subject to Spatially Correlated Noise
• Excited states of a phosphorus pair in silicon: Effects of valley-orbital interaction and electron-electron interactions
• Probing the Atomic Arrangement of Sub-Surface Dopants in a Silicon Quantum Device Platform
• A Computational Workflow for Designing Silicon Donor Qubits
• Towards hole-spin qubits in Si pMOSFETs within a planar CMOS foundry technology
• Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling
• Bardeen's tunneling theory applied to intraorbital and interorbital hopping integrals between dopants in silicon
• Fight or Flight: Cosmic Ray-Induced Phonons and the Quantum Surface Code
• Machine Learning Force Field for Thermal Oxidation of Silicon
• Envelope-function theory of inhomogeneous strain in semiconductor nanostructures
• Few-electrode design for silicon MOS quantum dots
• Gate control, g-factors and spin orbit energy of p-type GaSb nanowire quantum dot devices
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
• Fast spin-valley-based quantum gates in Si with micromagnets
• Direct measurement of 2DEG states in shallow Si:Sb $\delta$-layers
• Assessing quantum dot SWAP gate fidelity using tensor network methods
• Hole spin splitting in a Ge quantum dot with finite barriers
• Electric and Magnetic Field Nano-Sensing Using a New, Atomic-like Qubit in a Carbon Nanotube
• Analytic approach to the Landau-Zener problem in bounded parameter space
• Operation of a quantum dot in the finite-state machine mode: single-electron dynamic memory
• Correcting on-chip distortion of control pulses with silicon spin qubits
• Electrical Interconnects for Silicon Spin Qubits
• Effect of device design on charge offset drift in Si/SiO${}_2$ single electron devices
• Spin Hot Spots in Single-Electron GaAs-based Quantum Dots
• Topological charge and spin pumping in a semiconductor nanowire
• Bootstrapping, autonomous testing, and initialization system for Si/Si${}_x$Ge${}_{1-x}$ multi-quantum-dot devices
• Disordered Si:P nanostructures as switches and wires for nanodevices
• Imaging asymmetric Coulomb blockade phenomena across metallic nanoislands
• Transport-induced suppression of nuclear field fluctuations in multi-quantum-dot systems
• Does Cosmological Evolution Select for Technology?
• Modeling dynamics of entangled physical systems with superconducting quantum computer
• Spin-Noise and Damping in Individual Metallic Ferromagnetic Nanoparticles
• Impact of the valley orbit coupling on exchange gate for spin qubits in silicon quantum dots
• Donors in Ge as Qubits: Establishing Physical Attributes
• Isotope engineering of silicon and diamond for quantum computing and sensing applications
• Control of threshold voltages in Si/SiGe quantum devices via optical illumination
• Purcell-enhanced lifetime modulation of quantum emitters as a probe of local refractive index changes
• Quantum Error Correction Assisted Axion Search in CMOS Spin Qubit Arrays
• Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
• The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
• Compilation Techniques for Spin Qubits in a Shuttling Bus Architecture
• Efficient unitary method for simulation of driven quantum dot systems
• Micromagnet-free operation of electron spin qubits in Si/Si${}_{1-x}$Ge${}_x$ vertical double quantum dots
• Quantum correlation generation capability of experimental processes
• Quantum Algorithms, Architecture, and Error Correction
• State Initialization of a Hot Spin Qubit in a Double Quantum Dot by Measurement-Based Quantum Feedback Control
• Quantum gates in coupled quantum dots controlled by coupling modulation
• Total energy calculation for the metallic hcp phase of Zn in the bulk, layered, and quantum dot limits
• Artificial versus Natural Atoms: The uncanny capability of the many-body Schrödinger equation to produce emergent behavior
• Electrically driven spin resonance with bichromatic driving
• Inter- and intra-band Coulomb interactions between holes in silicon nanostructures
• Exact Multi-Valley Envelope Function Theory of Valley Splitting in Si/SiGe Nanostructures
• Non-adiabatic quantum control of valley states in silicon
• Effects of valley splitting on resonant-tunneling readout of spin qubits
• Landau-Zener Transitions in Spin Qubit Encoded in Three Quantum Dots
• Strained Donor-Bound Excitons in ${}^{28}$Si
• Efficient electron transfer in quantum dot chains controlled by a cubic detuning profile via shortcuts to adiabaticity
• Negative exchange interaction in Si quantum dot arrays via valley-phase induced ${\mathbb{Z}}_2$ gauge field
• Suppression of coherent errors during entangling operations in NV centers in diamond
• Switchable spin-photon coupling with hole spins in single-quantum dots
• Four-state discrimination for a pair of spin qubits via gate reflectometry
• Silicon Donor Array as a Disordered One-Dimensional Electron Gas
• Two-and three-qubit room-temperature graphene quantum gates
• High-temperature operation of a silicon qubit
• Development of nanowire devices with quantum functionalities
• Toward quantum interconnects featuring nanometer-to-picometer bandwidth compression and THz-range quantum frequency conversion
• Interplay of Pauli blockade with electron-photon coupling in quantum dots
• A Temperature Change can Solve the Deutsch-Jozsa Problem : An Exploration of Thermodynamic Query Complexity
• Controlled-Not Quantum Logic Gate in Two Strongly Coupled Semiconductor Charge Qubits
• Comparison of spin-qubit architectures for quantum error-correcting codes
• Quantum Transport in 40-nm MOSFETs at Deep-Cryogenic Temperatures
• Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers
• Robust iSWAP gates for semiconductor spin qubits with local driving
• Role of Noise in Nanostructure Formation: A Theoretical Investigation of Quantum Dots and Quantum Dot Molecules
• Interaction without back-action in the context of quantum manipulation
• Magnetic control of electron scattering in silicene quantum dots
• Digital-Controlled Method of Conveyor-Belt Spin Shuttling in Silicon for Large-Scale Quantum Computation