Preparation and Readout of Multielectron High-Spin States in a Gate-Defined GaAs/AlGaAs Quantum Dot

Abstract

We report the preparation and readout of multielectron high-spin states, a three-electron quartet, and a four-electron quintet, in a gate-defined GaAs/AlGaAs single quantum dot using spin filtering by quantum Hall edge states coupled to the dot. The readout scheme consists of mapping from multielectron to two-electron spin states and a subsequent two-electron spin readout, thus obviating the need to resolve dense multielectron energy levels. Using this technique, we measure the relaxations of the high-spin states and find them to be an order of magnitude faster than those of low-spin states. Numerical calculations of spin relaxation rates using the exact diagonalization method agree with the experiment. The technique developed here offers a new tool for the study and application of high-spin states in quantum dots.

arXiv comment13 pages, 4 figures

References in corpus (37)

• Spins in few-electron quantum dots
• Single-shot read-out of an individual electron spin in a quantum dot
• Silicon Quantum Electronics
• Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots
• Phonon-induced decay of the electron spin in quantum dots
• The Addition Spectrum of a Lateral Dot from Coulomb and Spin Blockade Spectroscopy
• Multi-valued Logic Gates for Quantum Computation
• Allowed and forbidden transitions in artificial hydrogen and helium atoms
• Single-shot readout of electron spin states in a quantum dot using spin-dependent tunnel rates
• Rapid Single-Shot Measurement of a Singlet-Triplet Qubit
• Singlet-triplet spin blockade and charge sensing in a few-electron double quantum dot
• Electrical control of spin relaxation in a quantum dot
• Full configuration interaction approach to the few-electron problem in artificial atoms
• Beyond Triplet: Unconventional Superconductivity in a Spin-3/2 Topological Semimetal
• Experimental signature of phonon-mediated spin relaxation
• Excited-state spectroscopy on a nearly-closed quantum dot via charge detection
• Quantum Lattice Model Solver $\mathcal{H}\Phi$
• Spin-based quantum computation in multielectron quantum dots
• Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot
• Spin relaxation at the singlet-triplet crossing in a quantum dot
• Spin relaxations in semiconductor quantum dots
• Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot
• Electrotunable artificial molecules based on van der Waals heterostructures
• Coherence and Screening in Multi-Electron Spin Qubits
• Screening of charged impurities with multi-electron singlet-triplet spin qubits in quantum dots
• Spin relaxation anisotropy in a GaAs quantum dot
• Electrical pump-and-probe study of spin singlet-triplet relaxation in a quantum dot
• Triplet-Singlet Spin Relaxation in Quantum Dots with Spin-Orbit Coupling
• Reduced electron relaxation rate in multi-electron quantum dots
• Six-electron semiconductor double quantum dot qubits
• Electronic States and Transport Phenomena in Quantum Dot Systems
• Validity of the single-particle description and charge noise resilience for multielectron quantum dots
• Spin Qubits in Multi-Electron Quantum Dots
• Noise-Protected Gate for Six-Electron Double-Dot Qubits
• Spin-dependent current through a quantum dot from spin-polarized non-equilibrium quantum Hall edge channels
• Quantitative modeling of spin relaxation in quantum dots
• Edge channel confinement in a bilayer graphene $n$-$p$-$n$ quantum dot

Cited by in corpus (3)

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• Exploring Entanglement Spectrum and Phase Diagram in multi-electron Quantum Dot Chains