Coherence and Screening in Multi-Electron Spin Qubits
arXiv:1306.2720 · doi:10.1103/PhysRevLett.112.026801
Abstract
The performance of multi-electron spin qubits is examined by comparing exchange oscillations in coupled single-electron and multi-electron quantum dots in the same device. Fast (> 1 GHz) exchange oscillations with a quality factor Q > 15 are found for the multi-electron case, compared to Q ~ 2 for the single-electron case, the latter consistent with previous experiments. A model of dephasing that includes voltage and hyperfine noise is developed that is in good agreement with both single- and multi-electron data, though in both cases additional exchange-independent dephasing is needed to obtain quantitative agreement across a broad parameter range.
Supplemental Material here: https://dl.dropboxusercontent.com/u/1742676/Higg_Supplement.pdf
References in corpus (11)
- A single-atom electron spin qubit in silicon
- Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
- Circuit Quantum Electrodynamics with a Spin Qubit
- Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit
- Singlet-triplet decoherence due to nuclear spins in a double quantum dot
- Valley-spin blockade and spin resonance in carbon nanotubes
- Measurement of Temporal Correlations of the Overhauser Field in a Double Quantum Dot
- Pauli spin blockade in carbon nanotube double quantum dots
- Six-electron semiconductor double quantum dot qubits
- Spin Qubits in Multi-Electron Quantum Dots
- Noise-Protected Gate for Six-Electron Double-Dot Qubits
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- Preparation and Readout of Multielectron High-Spin States in a Gate-Defined GaAs/AlGaAs Quantum Dot
- Theory on electron-phonon spin dehphasing in GaAs multi-electron double quantum dots
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- Limitations on the maximal level of entanglement of two singlet-triplet qubits in GaAs quantum dots