Charge-noise resilience of two-electron quantum dots in Si/SiGe heterostructures

Abstract

The valley degree of freedom presents challenges and opportunities for silicon spin qubits. An important consideration for singlet-triplet states is the presence of two distinct triplets, comprised of valley vs. orbital excitations. Here we show that both of these triplets are present in the typical operating regime, but that only the valley-excited triplet offers intrinsic protection against charge noise. We further show that this protection arises naturally in dots with stronger confinement. These results reveal an inherent advantage for silicon-based multi-electron qubits.

6 pages, 5 figures

References in corpus (7)

• Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
• Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit
• Scalable gate architecture for densely packed semiconductor spin qubits
• Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
• Strong electron-electron interactions in Si/SiGe quantum dots
• How valley-orbit states in silicon quantum dots probe quantum well interfaces
• Validity of the single-particle description and charge noise resilience for multielectron quantum dots

Cited by in corpus (4)

• Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
• Valleytronic full configuration-interaction approach: An application to the excitation spectra of Si double-dot qubits
• Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot
• The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe