Charge-noise resilience of two-electron quantum dots in Si/SiGe heterostructures
arXiv:2105.10643 · doi:10.1103/PhysRevLett.128.247701
Abstract
The valley degree of freedom presents challenges and opportunities for silicon spin qubits. An important consideration for singlet-triplet states is the presence of two distinct triplets, comprised of valley vs. orbital excitations. Here we show that both of these triplets are present in the typical operating regime, but that only the valley-excited triplet offers intrinsic protection against charge noise. We further show that this protection arises naturally in dots with stronger confinement. These results reveal an inherent advantage for silicon-based multi-electron qubits.
arXiv comment6 pages, 5 figures
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Cited by in corpus (4)
- Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
- Valleytronic full configuration-interaction approach: An application to the excitation spectra of Si double-dot qubits
- Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot
- The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe