Valley-based noise-resistant quantum computation using Si quantum dots

Abstract

We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot, with a Zeeman field enabling unambiguous initialization. A top gate gives a difference in the valley splitting between the dots, allowing controllable interdot tunneling between opposite valley eigenstates, which enables one-qubit rotations. Two-qubit operations rely on a stripline resonator, and readout on charge sensing. Sensitivity to charge and spin fluctuations is determined by intervalley processes and is greatly reduced as compared to conventional spin and charge qubits. We describe a valley echo for further noise suppression.

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Cited by in corpus (53)

• Silicon Quantum Electronics
• Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
• Reduced sensitivity to charge noise in semiconductor spin qubits via symmetric operation
• Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate
• Electron spin resonance and spin-valley physics in a silicon double quantum dot
• Three-electron spin qubits
• Spatially Resolving Valley Quantum Interference of a Donor in Silicon
• Universal Quantum Computing with Spin and Valley
• High Resolution Valley Spectroscopy of Si Quantum Dots
• Electron-hole crossover in gate-controlled bilayer graphene quantum dots
• Opto-valleytronic imaging of atomically thin semiconductors
• Valley dependent anisotropic spin splitting in silicon quantum dots
• Electron g-factor of valley states in realistic silicon quantum dots
• Valley splitting of single-electron Si MOS quantum dots
• Spin Relaxation due to Charge Noise
• Disorder-induced valley-orbit hybrid states in Si quantum dots
• Impurity-assisted electric control of spin-valley qubits in monolayer MoS${}_2$
• Control of valley dynamics in silicon quantum dots in the presence of an interface step
• Hybrid spin and valley quantum computing with singlet-triplet qubits
• Two-electron dephasing in single Si and GaAs quantum dots
• Valley polarization assisted spin polarization in two dimensions
• Dressed photon-orbital states in a quantum dot: Inter-valley spin resonance
• Topological photonic orbital angular momentum switch
• Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene
• Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot
• Adiabatic electron charge transfer between two quantum dots in presence of 1/f noise
• Detection of thermodynamic "valley noise" in monolayer semiconductors: access to intrinsic valley relaxation timescales
• Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies
• Theory of Spin Relaxation in Two-Electron Lateral Coupled Si/SiGe Quantum Dots
• A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
• Transmission spectra and valley processing of graphene and carbon nanotube superlattices with inter-valley coupling
• Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling
• Valley current generation using biased bilayer graphene dots
• Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots
• Spin-Valley Qubit Dynamics In Exchange Coupled Silicon Quantum Dots
• Valley blockade and multielectron spin-valley Kondo effect in silicon
• Coulomb interaction and valley-orbit coupling in Si quantum dots
• Valley relaxation in graphene due to charged impurities
• Designing dynamically corrected gates robust to multiple noise sources using geometric space curves
• Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface
• Splitting Valleys in Si/SiO${}_2$: Identification and Control of Interface States
• Realization of valley-spin polarized current via parametric pump in monolayer $\mathrm{Mo}{\mathrm{S}}_2$
• Direct measurement of electron intervalley relaxation in a Si/SiGe quantum dot
• Current hot spot in the spin-valley blockade in carbon nanotubes
• Charge-noise resilience of two-electron quantum dots in Si/SiGe heterostructures
• Orbital hyperfine interaction and qubit dephasing in carbon nanotube quantum dots
• Trigonal warping, pseudodiffusive transport, and finite-system version of the Lifshitz transition in magnetoconductance of bilayer-graphene Corbino disks
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• Metallic behaviour in SOI quantum wells with strong intervalley scattering
• Efficient unitary method for simulation of driven quantum dot systems
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• Effects of valley splitting on resonant-tunneling readout of spin qubits
• Non-adiabatic quantum control of valley states in silicon