Minimal evolution times for fast, pulse-based state preparation in silicon spin qubits
arXiv:2406.10913 · doi:10.1038/s41534-025-01027-8
Abstract
Standing as one of the most significant barriers to reaching quantum advantage, state-preparation fidelities on noisy intermediate-scale quantum processors suffer from quantum-gate errors, which accumulate over time. A potential remedy is pulse-based state preparation. We numerically investigate the minimal evolution times (METs) attainable by optimizing (microwave and exchange) pulses on silicon hardware. We investigate two state preparation tasks. First, we consider the preparation of molecular ground states and find the METs for H, HeH, and LiH to be 2.4 ns, 4.4 ns, and 27.2 ns, respectively. Second, we consider transitions between arbitrary states and find the METs for transitions between arbitrary four-qubit states to be below 50 ns. For comparison, connecting arbitrary two-qubit states via one- and two-qubit gates on the same silicon processor requires approximately 200 ns. This comparison indicates that pulse-based state preparation is likely to utilize the coherence times of silicon hardware more efficiently than gate-based state preparation. Finally, we quantify the effect of silicon device parameters on the MET. We show that increasing the maximal exchange amplitude from 10 MHz to 1 GHz accelerates the METs, e.g., for H from 84.3 ns to 2.4 ns. This demonstrates the importance of fast exchange. We also show that increasing the maximal amplitude of the microwave drive from 884 kHz to 56.6 MHz shortens state transitions, e.g., for two-qubit states from 1000 ns to 25 ns. Our results bound both the state-preparation times for general quantum algorithms and the execution times of variational quantum algorithms with silicon spin qubits.
9 + (7) pages, 6 figs, comments are welcomed
References in corpus (49)
- Quantum Computation with Quantum Dots
- Variational Quantum Algorithms
- Quantum computational chemistry
- Coupled quantum dots as quantum gates
- Silicon Quantum Electronics
- The Variational Quantum Eigensolver: a review of methods and best practices
- A Two Qubit Logic Gate in Silicon
- A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
- Semiconductor Spin Qubits
- Quantum speed limits: from Heisenberg's uncertainty principle to optimal quantum control
- Quantum Simulators: Architectures and Opportunities
- Quantum CNOT Gate for Spins in Silicon
- Computing with spin qubits at the surface code error threshold
- Fast universal quantum control above the fault-tolerance threshold in silicon
- Universal control of a six-qubit quantum processor in silicon
- Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array
- Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit
- Two-qubit silicon quantum processor with operation fidelity exceeding 99%
- Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
- Noise suppression using symmetric exchange gates in spin qubits
- A fault-tolerant addressable spin qubit in a natural silicon quantum dot
- Review of performance metrics of spin qubits in gated semiconducting nanostructures
- Probing single electrons across 300 mm spin qubit wafers
- Application of fermionic marginal constraints to hybrid quantum algorithms
- Universal logic with encoded spin qubits in silicon
- Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot
- High-fidelity quantum gates in Si/SiGe double quantum dots
- Coherent spin qubit transport in silicon
- Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
- From pulses to circuits and back again: A quantum optimal control perspective on variational quantum algorithms
- High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin
- Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot
- Robust micro-magnet design for fast electrical manipulations of single spins in quantum dots
- Nanoscale broadband transmission lines for spin qubit control
- Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
- Hubbard model description of silicon spin qubits: charge stability diagram and tunnel coupling in Si double quantum dots
- Valley splitting of single-electron Si MOS quantum dots
- Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
- Quantifying the effect of gate errors on variational quantum eigensolvers for quantum chemistry
- Pulse variational quantum eigensolver on cross-resonance based hardware
- How many CNOT gates does it take to generate a three-qubit state ?
- Fast high-fidelity entangling gates for spin qubits in Si double quantum dots
- Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling
- Evaluation of Parameterized Quantum Circuits with Cross-Resonance Pulse-Driven Entanglers
- PANSATZ: Pulse-based Ansatz for Variational Quantum Algorithms
- Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process
- Dynamic-ADAPT-QAOA: An algorithm with shallow and noise-resilient circuits
- Layering and subpool exploration for adaptive Variational Quantum Eigensolvers: Reducing circuit depth, runtime, and susceptibility to noise
- State preparation of lattice field theories using quantum optimal control