Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry

Abstract

Heavy holes confined in quantum dots are predicted to be promising candidates for the realization of spin qubits with long coherence times. Here we focus on such heavy-hole states confined in Germanium hut wires. By tuning the growth density of the latter we can realize a T-like structure between two neighboring wires. Such a structure allows the realization of a charge sensor, which is electrostatically and tunnel coupled to a quantum dot, with charge-transfer signals as high as 0.3e. By integrating the T-like structure into a radio-frequency reflectometry setup, single-shot measurements allowing the extraction of hole tunneling times are performed. The extracted tunneling times of less than 10$\mu$s are attributed to the small effective mass of Ge heavy-hole states and pave the way towards projective spin readout measurements.

References in corpus (25)

• Spins in few-electron quantum dots
• Electron transport through double quantum dots
• Single-shot read-out of an individual electron spin in a quantum dot
• Silicon Quantum Electronics
• A single-atom electron spin qubit in silicon
• Single-shot readout of an electron spin in silicon
• Storing quantum information for 30 seconds in a nanoelectronic device
• A CMOS silicon spin qubit
• Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires
• Fast Single-Charge Sensing with an rf Quantum Point Contact
• Spin decoherence of a heavy hole coupled to nuclear spins in a quantum dot
• Spin relaxation and decoherence of holes in quantum dots
• Strong Spin-Orbit Interaction and Helical Hole States in Ge/Si Nanowires
• Strong and Tunable Spin-Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires
• Monolithic growth of ultra-thin Ge nanowires on Si(001)
• Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot
• Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon
• Hole Spin Coherence in a Ge/Si Heterostructure Nanowire
• Heavy hole states in Germanium hut wires
• A Radio Frequency Charge Parity Meter
• Sensitive radio-frequency measurements of a quantum dot by tuning to perfect impedance matching
• Antilocalization of Coulomb Blockade in a Ge-Si Nanowire
• Radio frequency charge sensing in InAs nanowire double quantum dots
• Observation of spin-selective tunneling in SiGe nanocrystals
• Electron tunnel rates in a donor-silicon single electron transistor hybrid

Cited by in corpus (11)

• The germanium quantum information route
• Semiconductor Qubits In Practice
• Ge hole spin qubit
• Recent advances in hole-spin qubits
• Single-shot readout of hole spins in Ge
• Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
• Single-electron charge sensing in self-assembled quantum dots
• Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator
• Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits
• Entropy controlled fully reversible nanostructure formation of Ge on miscut vicinal Si (001) surfaces
• Acoustic phonons, spin-phonon coupling and spin relaxation via the lattice reorientation mechanism in hexagonal germanium nanowires