Low charge noise quantum dots with industrial CMOS manufacturing

Abstract

Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale uniformity and high device yield, but off the shelf transistor processes cannot be directly transferred to qubit structures due to the different designs and operation conditions. To therefore leverage the know-how of the micro-electronics industry, we customize a 300mm wafer fabrication line for silicon MOS qubit integration. With careful optimization and engineering of the MOS gate stack, we report stable and uniform quantum dot operation at the Si/SiOx interface at milli-Kelvin temperature. We extract the charge noise in different devices and under various operation conditions, demonstrating a record-low average noise level of 0.61 $\mu$eV/$\sqrt{Hz}$ at 1 Hz and even below 0.1 $\mu$eV/$\sqrt{Hz}$ for some devices and operating conditions. By statistical analysis of the charge noise with different operation and device parameters, we show that the noise source can indeed be well described by a two-level fluctuator model. This reproducible low noise level, in combination with uniform operation of our quantum dots, marks CMOS manufactured MOS spin qubits as a mature and highly scalable platform for high fidelity qubits.

22 pages, 13 figures

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Cited by in corpus (27)

• Assessment of error variation in high-fidelity two-qubit gates in silicon
• A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
• Characterization of individual charge fluctuators in Si/SiGe quantum dots
• Exploiting epitaxial strained germanium for scaling low noise spin qubits at the micron-scale
• Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures
• Violating Bell's inequality in gate-defined quantum dots
• Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays
• Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium
• Theory of charge stability diagrams in coupled quantum dot qubits
• Toward Axion Signal Extraction in Semiconductor Spin Qubits Via Spectral Engineering
• Erasure conversion for singlet-triplet spin qubits enables high-performance shuttling-based quantum error correction
• Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot
• Experimental online quantum dots charge autotuning using neural networks
• Resonator-mediated quantum gate between distant charge qubits
• Wavelet correlation noise analysis for qubit operation variable time series
• Interplay of Zeeman Splitting and Tunnel Coupling in Coherent Spin Qubit Shuttling
• RFSoC-based radio-frequency reflectometry in gate-defined bilayer graphene quantum devices
• Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots
• Radiofrequency cascade readout of coupled spin qubits
• Robust quantum dots charge autotuning using neural network uncertainty
• Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise
• Singlet-only Always-on Gapless Exchange Qubits with Baseband Control
• Magnetic Field Detection Using a Two-Qubit System Under Noisy Heisenberg Interaction
• Concatenated continuous driving of silicon qubit by amplitude and phase modulation
• Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements
• Commercial CMOS Process for Quantum Computing: Quantum Dots and Charge Sensing in a 22 nm Fully Depleted Silicon-on-Insulator Process
• Quantum Heat Under the Microscope: A Perspective on Cryogenic Scanning Thermal Microscopy