55 citations · 131 across the 19 of their papers we have counts for
22 papers
SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography
Thomas Van Caekenberghe, Paul Steinacker, Bart Raes +31
The realization of large-scale silicon quantum processors requires spin qubits compatible with advanced semiconductor manufacturing technologies, demanding lithographic processes t…
Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays
Arne Loenders, Jacques Van Damme, Clement Godfrin +19
Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness…
Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot
Xunyao Luo, Xander Peetroons, Tsung-Yeh Yang +27
Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-ph…
Concatenated continuous driving of silicon qubit by amplitude and phase modulation
Takuma Kuno, Takeru Utsugi, Andrew J. Ramsay +22
The rate of coherence loss is lower for a qubit under the Rabi drive than a freely evolving qubit . Building on this principle, concatenated continuous d…
Long coherence silicon spin qubit fabricated in a 300 mm industrial foundry
Petar Tomić, Patrick Bütler, Yuze Wu +17
Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fa…
Multimode RF Reflectometry for Spin Qubit Readout and Device Characterization
Joffrey Rivard, Alexis Morel, Olivier Romain +10
We introduce a multimode superconducting inductor architecture that enables radio-frequency reflectometry at multiple discrete frequencies up to 2 GHz, addressing limitations of co…
High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer
Xander Peetroons, Xunyao Luo, Tsung-Yeh Yang +26
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using elect…
Eight-Qubit Operation of a 300 mm SiMOS Foundry-Fabricated Device
Andreas Nickl, Nard Dumoulin Stuyck, Paul Steinacker +24
Silicon spin qubits are a promising platform for quantum computing due to their high coherence, controllability, and CMOS manufacturability, yet scalable implementations have so fa…
Hybrid Quantum Systems: Coupling Single-Molecule Magnet Qudits with Industrial Silicon Spin Qubits
Daniel Schroller, Daniel Sitter, Thomas Koch +12
Molecular spin qudits offer an attractive platform for quantum memory, combining long coherence times with rich multi-level spin structures. Terbium bis(phthalocyaninato) (TbPc…
Precision high-speed quantum logic with holes on a natural silicon foundry platform
Isaac Vorreiter, Jonathan Y. Huang, Scott D. Liles +15
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins…
Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
I. Fattal, J. Van Damme, B. Raes +14
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly us…
Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
J. P. Wendoloski, J. Hillier, S. D. Liles +17
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…
A trilinear quantum dot architecture for semiconductor spin qubits
R. Li, V. Levajac, C. Godfrin +10
Semiconductor quantum dot spin qubits hold significant potential for scaling to millions of qubits for practical quantum computing applications, as their structure highly resembles…
Probing g-tensor reproducibility and spin-orbit effects in planar silicon hole quantum dots
Ik Kyeong Jin, Joseph Hillier, Scott D. Liles +9
In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. U…
Statistical Analysis of Spurious Dot Formation in SiMOS Single Electron Transistors
Kuan-Chu Chen, Clement Godfrin, George Simion +8
The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs), fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a d…
A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
Paul Steinacker, Nard Dumoulin Stuyck, Wee Han Lim +24
Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially via…
Industrial 300mm wafer processed spin qubits in natural silicon/silicon-germanium
Thomas Koch, Clement Godfrin, Viktor Adam +11
The realisation of an universal quantum computer will require the operation of thousands to millions of qubits. The possibility of using existing industrial semiconductor fabricati…
Experimental online quantum dots charge autotuning using neural networks
Victor Yon, Bastien Galaup, Claude Rohrbacher +11
Spin-based semiconductor qubits hold promise for scalable quantum computing, yet they require reliable autonomous calibration procedures. This study presents an experimental demons…
Robust quantum dots charge autotuning using neural network uncertainty
Victor Yon, Bastien Galaup, Claude Rohrbacher +10
This study presents a machine-learning-based procedure to automate the charge tuning of semiconductor spin qubits with minimal human intervention, addressing one of the significant…
Low charge noise quantum dots with industrial CMOS manufacturing
Asser Elsayed, Mohamed Shehata, Clement Godfrin +12
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling…
Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process
N. I. Dumoulin Stuyck, R. Li, C. Godfrin +12
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 3…
A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
R. Li, N. I. Dumoulin Stuyck, S. Kubicek +12
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modificat…