105 citations · 316 across the 21 of their papers we have counts for
23 papers
Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot
Xunyao Luo, Xander Peetroons, Tsung-Yeh Yang +27
Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-ph…
A current source with metrological precision made on a 300mm silicon MOS process
Nathan Johnson, Stefan Kubicek, Julien Jussot +5
Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The er…
Concatenated continuous driving of silicon qubit by amplitude and phase modulation
Takuma Kuno, Takeru Utsugi, Andrew J. Ramsay +22
The rate of coherence loss is lower for a qubit under the Rabi drive than a freely evolving qubit . Building on this principle, concatenated continuous d…
Long coherence silicon spin qubit fabricated in a 300 mm industrial foundry
Petar Tomić, Patrick Bütler, Yuze Wu +17
Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fa…
Multimode RF Reflectometry for Spin Qubit Readout and Device Characterization
Joffrey Rivard, Alexis Morel, Olivier Romain +10
We introduce a multimode superconducting inductor architecture that enables radio-frequency reflectometry at multiple discrete frequencies up to 2 GHz, addressing limitations of co…
High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer
Xander Peetroons, Xunyao Luo, Tsung-Yeh Yang +26
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using elect…
Eight-Qubit Operation of a 300 mm SiMOS Foundry-Fabricated Device
Andreas Nickl, Nard Dumoulin Stuyck, Paul Steinacker +24
Silicon spin qubits are a promising platform for quantum computing due to their high coherence, controllability, and CMOS manufacturability, yet scalable implementations have so fa…
Hybrid Quantum Systems: Coupling Single-Molecule Magnet Qudits with Industrial Silicon Spin Qubits
Daniel Schroller, Daniel Sitter, Thomas Koch +12
Molecular spin qudits offer an attractive platform for quantum memory, combining long coherence times with rich multi-level spin structures. Terbium bis(phthalocyaninato) (TbPc…
Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements
Marc-Antoine Roux, Joffrey Rivard, Victor Yon +18
Spin qubits need to operate within a very precise voltage space around charge state transitions to achieve high-fidelity gates. However, the stability diagrams that allow the ident…
Precision high-speed quantum logic with holes on a natural silicon foundry platform
Isaac Vorreiter, Jonathan Y. Huang, Scott D. Liles +15
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins…
Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
I. Fattal, J. Van Damme, B. Raes +14
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly us…
Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
J. P. Wendoloski, J. Hillier, S. D. Liles +17
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…
A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
Paul Steinacker, Nard Dumoulin Stuyck, Wee Han Lim +24
Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially via…
Radiofrequency cascade readout of coupled spin qubits
Jacob F. Chittock-Wood, Ross C. C. Leon, Michael A. Fogarty +12
Silicon spin qubits based on metal-oxide-semiconductor (MOS) technology are compatible with semiconductor manufacturing and offer a route to scalable quantum processing. However, s…
An elongated quantum dot as a distributed charge sensor
S. M. Patomäki, J. Williams, F. Berritta +10
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongate…
Low charge noise quantum dots with industrial CMOS manufacturing
Asser Elsayed, Mohamed Shehata, Clement Godfrin +12
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling…
Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers
D. P. Lozano, M. Mongillo, X. Piao +19
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superc…
Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms
J. Verjauw, R. Acharya, J. Van Damme +11
As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of pr…
Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process
N. I. Dumoulin Stuyck, R. Li, C. Godfrin +12
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 3…
High mobility SiMOSFETs fabricated in a full 300mm CMOS process
Timothy N. Camenzind, Asser Elsayed, Fahd A. Mohiyaddin +7
The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this w…
A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
R. Li, N. I. Dumoulin Stuyck, S. Kubicek +12
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modificat…
Investigation of microwave loss induced by oxide regrowth in high-Q Nb resonators
J. Verjauw, A. Potočnik, M. Mongillo +16
The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microw…
Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices
Danny Wan, Mauricio Manfrini, Adrien Vaysset +16
Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independen…