activity
20172026
most citedInvestigation of microwave loss induced by oxide regrowth in high-Q Nb resonators

105 citations · 316 across the 21 of their papers we have counts for

collaborators
Showing 2025Show all

9 papers · 1 filter

cond-mat.mes-hall2025

Long coherence silicon spin qubit fabricated in a 300 mm industrial foundry

Petar Tomić, Patrick Bütler, Yuze Wu +17

Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fa…

cond-mat.mes-hall2025

Multimode RF Reflectometry for Spin Qubit Readout and Device Characterization

Joffrey Rivard, Alexis Morel, Olivier Romain +10

We introduce a multimode superconducting inductor architecture that enables radio-frequency reflectometry at multiple discrete frequencies up to 2 GHz, addressing limitations of co…

cond-mat.mes-hall2025

High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer

Xander Peetroons, Xunyao Luo, Tsung-Yeh Yang +26

We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using elect…

quant-ph2025

Eight-Qubit Operation of a 300 mm SiMOS Foundry-Fabricated Device

Andreas Nickl, Nard Dumoulin Stuyck, Paul Steinacker +24

Silicon spin qubits are a promising platform for quantum computing due to their high coherence, controllability, and CMOS manufacturability, yet scalable implementations have so fa…

cond-mat.mes-hall2025

Hybrid Quantum Systems: Coupling Single-Molecule Magnet Qudits with Industrial Silicon Spin Qubits

Daniel Schroller, Daniel Sitter, Thomas Koch +12

Molecular spin qudits offer an attractive platform for quantum memory, combining long coherence times with rich multi-level spin structures. Terbium bis(phthalocyaninato) (TbPc…

cond-mat.mes-hall2025★ 1 cited

Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements

Marc-Antoine Roux, Joffrey Rivard, Victor Yon +18

Spin qubits need to operate within a very precise voltage space around charge state transitions to achieve high-fidelity gates. However, the stability diagrams that allow the ident…

cond-mat.mes-hall2025

Precision high-speed quantum logic with holes on a natural silicon foundry platform

Isaac Vorreiter, Jonathan Y. Huang, Scott D. Liles +15

Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins…

cond-mat.mes-hall2025

Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot

I. Fattal, J. Van Damme, B. Raes +14

Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly us…

cond-mat.mes-hall2025★ 1 cited

Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs

J. P. Wendoloski, J. Hillier, S. D. Liles +17

The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…