Unconventional Transport in the "Hole" Regime of a Si Double Quantum Dot

Abstract

Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double quantum dot in this regime cannot be fully explained using the conventional picture. Using a Hartree-Fock (HF) formalism and relevant HF energy parameters extracted from transport data in the multiple-electron regime, we identify a novel spin-flip cotunneling process that lifts a singlet blockade.

Supplemental material included as an appendix

References in corpus (6)

• Single-shot read-out of an individual electron spin in a quantum dot
• Single-shot readout of an electron spin in silicon
• Tunable spin-selective loading of a silicon spin qubit
• Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
• Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot
• Unconventional Transport in the "Hole" Regime of a Si Double Quantum Dot

Cited by in corpus (4)

• Silicon Quantum Electronics
• Electron spin resonance and spin-valley physics in a silicon double quantum dot
• Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices
• Unconventional Transport in the "Hole" Regime of a Si Double Quantum Dot