activity
20102026
most citedQuantum control and process tomography of a semiconductor quantum dot hybrid qubit

294 citations · 1.2k across the 26 of their papers we have counts for

collaborators

26 papers

quant-ph2026

Towards fault-tolerance with universal phase-error-transparent gates for high-spin cat codes

Kelvin Onggadinata, Si Yan Koh, Arghya Maity +5

High-dimensional nuclear spins offer a hardware-efficient route to quantum error correction (QEC), with the spin cat code providing intrinsic robustness against phase errors -- the…

quant-ph2026

Exact Tradeoff Between Quantum Error Correction and Quantum Darwinism: An Information-Theoretic No-Go Theorem

Arghya Maity, Kelvin Onggadinata, Teck Seng Koh

Quantum error correction (QEC) and Quantum Darwinism describe opposing consequences of system-environment interactions: QEC seeks to preserve logical quantum information, whereas Q…

cond-mat.mes-hall2026

Orbitally resolved single-photon emission from an individual atomic vacancy center in a semiconductor

Gagandeep Singh, Xiaodan Lyu, Bi Qi Chong +11

Atomically confined spins are emerging as active components in quantum optoelectronic devices such as quantum bits and sensors. However, interrogating single spins at atomic length…

cond-mat.mes-hall2026

Simultaneous High-Fidelity Readout and Strong Coupling for a Donor-Based Spin Qubit

Si Yan Koh, Weifan Wu, Kelvin Onggadinata +7

Superconducting resonators coupled to solid-state qubits offer a scalable architecture for long-range entangling operations and fast, high-fidelity readout. Realizing this requires…

quant-ph2026

Non-Markovian and Thermodynamic Signatures in the Classicality Assessment via Kolmogorov Consistency

Arghya Maity, Ahana Ghoshal, Kelvin Onggadinata +1

The Kolmogorov consistency condition (KCC) defines the statistical boundary between classical and quantum dynamics. Its violation signifies the breakdown of a classical Markov desc…

cond-mat.mes-hall2025

High-fidelity regimes of resonator-mediated controlled-Z gates between quantum-dot qubits

Guangzhao Yang, Marek Gluza, Si Yan Koh +6

Semiconductor double quantum dot (DQD) qubits coupled via superconducting microwave resonators provide a powerful means of long-range manipulation of the qubits' spin and charge de…

quant-ph2025★ 5 cited

Quantum Sensing Enhancement through a Nuclear Spin Register in Nitrogen-Vacancy Centers in Diamond

Jonathan Kenny, Feifei Zhou, Ruihua He +3

Quantum sensing has seen rapid progress from laboratory research to real-world applications. Solid-state spin systems, particularly nitrogen-vacancy (NV) centers in diamond, are at…

quant-ph2025

Efficient measure of information backflow with a quasistochastic process

Kelvin Onggadinata, Teck Seng Koh

Characterization and quantification of non-Markovian dynamics in open quantum systems are topical issues in the rapidly developing field of quantum computation and quantum communic…

cond-mat.mes-hall2024★ 4 cited

Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon

Radha Krishnan, Beng Yee Gan, Yu-Ling Hsueh +6

While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on…

cond-mat.mes-hall2024

High-Fidelity CZ Gates in Double Quantum Dot -- Circuit QED Systems Beyond the Rotating-Wave Approximation

Guangzhao Yang, Marek Gluza, Si Yan Koh +5

Semiconductor double quantum dot (DQD) qubits coupled via superconducting microwave resonators provide a powerful means of long-range manipulation of the qubits' spin and charge de…

cond-mat.mes-hall2024★ 22 cited

Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers

Thasneem Aliyar, Hongyang Ma, Radha Krishnan +10

Spins confined to point defects in atomically-thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single photon emitters and spin qu…

quant-ph2023★ 17 cited

Robust Nuclear Spin Polarization via Ground-State Level Anti-Crossing of Boron Vacancy Defects in Hexagonal Boron Nitride

Shihao Ru, Zhengzhi Jiang, Haidong Liang +14

Nuclear spin polarization plays a crucial role in quantum information processing and quantum sensing. In this work, we demonstrate a robust and efficient method for nuclear spin po…

cond-mat.mes-hall2021★ 65 cited

Excited-state optically detected magnetic resonance of spin defects in hexagonal boron nitride

Zhao Mu, Hongbing Cai, Disheng Chen +6

Negatively charged boron vacancy (VB-) centers in hexagonal boron nitride (hBN) are promising spin defects in a van der Waals crystal. Understanding the spin properties of the exci…

quant-ph2021★ 3 cited

Ghost factors in Gauss-sum factorization with transmon qubits

Lin Htoo Zaw, Yuanzheng Paul Tan, Long Hoang Nguyen +8

A challenge in the Gauss sums factorization scheme is the presence of ghost factors - non-factors that behave similarly to actual factors of an integer - which might lead to the mi…

cond-mat.mes-hall2021★ 3 cited

Two-qubit sweet spots for capacitively coupled exchange-only spin qubits

MengKe Feng, Lin Htoo Zaw, Teck Seng Koh

The implementation of high fidelity two-qubit gates is a bottleneck in the progress towards universal quantum computation in semiconductor quantum dot qubits. We study capacitive c…

quant-ph2016★ 7 cited

Coherent transfer of singlet-triplet qubit states in an architecture of triple quantum dots

MengKe Feng, Chang Jian Kwong, Teck Seng Koh +1

We propose two schemes to coherently transfer arbitrary quantum states of the two-electron singlet-triplet qubit across a chain of 3 quantum dots. The schemes are based on electric…

cond-mat.mes-hall2014★ 31 cited

Characterizing gate operations near the sweet spot of an exchange-only qubit

Jianjia Fei, Jo-Tzu Hung, Teck Seng Koh +4

Optimal working points or "sweet spots" have arisen as an important tool for mitigating charge noise in quantum dot logical spin qubits. The exchange-only qubit provides an ideal s…

cond-mat.mes-hall2014★ 294 cited

Quantum control and process tomography of a semiconductor quantum dot hybrid qubit

Dohun Kim, Zhan Shi, C. B. Simmons +9

The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have…

cond-mat.mes-hall2013★ 96 cited

Fast coherent manipulation of three-electron states in a double quantum dot

Zhan Shi, C. B. Simmons, Daniel R. Ward +9

A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of el…

cond-mat.mes-hall2013★ 40 cited

High-fidelity gates in quantum dot spin qubits

Teck Seng Koh, S. N. Coppersmith, Mark Friesen

Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to co…

cond-mat.mes-hall2012★ 109 cited

Coherent Quantum Oscillations in a Silicon Charge Qubit

Zhan Shi, C. B. Simmons, Daniel. R. Ward +10

Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomoge…

quant-ph2012★ 85 cited

Pulse-gated quantum dot hybrid qubit

Teck Seng Koh, John King Gamble, Mark Friesen +2

A quantum dot hybrid qubit formed from three electrons in a double quantum dot has the potential for great speed, due to presence of level crossings where the qubit becomes charge-…

quant-ph2011★ 226 cited

A fast "hybrid" silicon double quantum dot qubit

Zhan Shi, C. B. Simmons, J. R. Prance +9

We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot…

cond-mat.mes-hall2010★ 167 cited

Tunable spin-selective loading of a silicon spin qubit

C. B. Simmons, J. R. Prance, B. J. Van Bael +8

The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attr…