Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
arXiv:2402.01193 · doi:10.1021/acs.nanolett.3c03681
Abstract
Spins confined to point defects in atomically-thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulphur vacancies in molybdenum disulphide (MoS2) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. Spectroscopic mapping of defect wavefunctions reveals an interplay of local symmetry breaking by a charge-state dependent Jahn-Teller lattice distortion that, when combined with strong (~100 meV) spin-orbit coupling, leads to a locking of an unpaired spin-1/2 magnetic moment to the lattice at low temperature, susceptible to lattice strain. Our results provide new insights into spin and electronic structure of vacancy induced in-gap states towards their application as electrically and optically addressable quantum systems.
References in corpus (28)
- The nitrogen-vacancy colour centre in diamond
- Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide
- Quantum computing with defects
- A single-atom electron spin qubit in silicon
- Semiconductor Qubits In Practice
- Stability and dopability of native defects and group-V and -VII impurities in single-layer MoS2
- Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides
- Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
- Atomistic defect states as quantum emitters in monolayer MoS
- Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2
- Minimizing Residues and Strain in 2D Materials Transferred from PDMS
- Structure of nanocrystalline materials using atomic pair distribution function analysis: study of LiMoS2
- Defect Tolerant Monolayer Transition Metal Dichalcogenides
- Strain-induced magnetism in MoS2 monolayer with defects
- Electrically driven photon emission from individual atomic defects in monolayer WS2
- Spin-Valley Locking Effect in Defect States of Monolayer MoS
- Giant spin-orbit splitting of point defect states in monolayer WS
- Spatially Resolving Valley Quantum Interference of a Donor in Silicon
- Substrate screening effects on the quasiparticle band gap and defect charge transition levels in MoS
- Antisite defect qubits in monolayer transition metal dichalcogenides
- Local Spectroscopic Characterization of Spin and Layer Polarization in WSe
- Observation of intervalley quantum interference in epitaxial monolayer WSe2
- Hole Transport in Exfoliated Monolayer MoS
- Symmetry of standing waves generated by a point defect in epitaxial graphene
- Time-Resolved Single Dopant Charge Dynamics in Silicon
- Stability of charged sulfur vacancies in 2D and bulk MoS from plane-wave density functional theory with electrostatic corrections
- Spin-valley locking for in-gap quantum dots in a MoS2 transistor
- Defects, band bending and ionization rings in MoS2