Strain-induced magnetism in MoS2 monolayer with defects
arXiv:1309.2066 · doi:10.1063/1.4864015
Abstract
The strain-induced magnetism is observed in single-layer MoS2 with atomic single vacancies from density functional calculations. Calculated magnetic moment is no less than 2muB per vacancy defect. The straininduced band gap closure is concurrent with the occurrence of the magnetism. Possible physical mechanism of the emergence of strain-induced magnetism is illustrated. We also demonstrate the possibility to test the predicted magnetism in experiment. Our study may provide an opportunity for the design of new type of memory-switching or logic devices by using earth-rich nonmagnetic materials MoS2.
4 pages,5 figures
References in corpus (7)
- Two Dimensional Atomic Crystals
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Magnetism in Graphene Induced by Single-Atom Defects
- Emergence of magnetism in graphene materials and nanostructures
- Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
- Vacancy induced magnetism in graphene and graphene ribbons
- Nonmagnetic-Defect-Induced Magnetism in Graphene
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- Phonon Bandgap Engineering of Strained Monolayer MoS2
- Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
- Single-layer -MoS under electron irradiation from molecular dynamics
- An investigation on electronic and magnetic properties of Cr substituted MoS monolayer and multilayers-Hybrid functional calculations
- Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors
- Stable Ultra-thin CdTe Crystal: A Robust Direct Gap Semiconductor
- Modern triad for magnetic material science: geometric shape, electronic bands and spin textures