Antisite defect qubits in monolayer transition metal dichalcogenides
arXiv:2105.11019 · doi:10.1038/s41467-022-28133-x
Abstract
Being atomically thin and amenable to external controls, two-dimensional (2D) materials offer a new paradigm for the realization of patterned qubit fabrication and operation at room temperature for quantum information sciences applications. Here we show that the antisite defect in 2D transition metal dichalcogenides (TMDs) can provide a controllable solid-state spin qubit system. Using high-throughput atomistic simulations, we identify several neutral antisite defects in TMDs that lie deep in the bulk band gap and host a paramagnetic triplet ground state. Our in-depth analysis reveals the presence of optical transitions and triplet-singlet intersystem crossing processes for fingerprinting these defect qubits. As an illustrative example, we discuss the initialization and readout principles of an antisite qubit in WS2, which is expected to be stable against interlayer interactions in a multilayer structure for qubit isolation and protection in future qubit-based devices. Our study opens a new pathway for creating scalable, room-temperature spin qubits in 2D TMDs.
References in corpus (5)
- Isolated electron spins in silicon carbide with millisecond-coherence times
- First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centre
- All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond
- The negatively charged nitrogen-vacancy centre in diamond: the electronic solution
- Universal coherence protection in a solid-state spin qubit
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- Excitonic response in TMD heterostructures from first-principles: impact of stacking, twisting, and interlayer distance
- Band structures and invariants of two-dimensional transition metal dichalcogenide monolayers from fully-relativistic Dirac-Kohn-Sham theory using Gaussian-type orbitals
- Quantum Defects in 2D Transition Metal Dichalcogenides for Terahertz Technologies
- First-principles computational methods for quantum defects in two-dimensional materials: A perspective
- Simulating optically-active spin defects with a quantum computer
- The electronic structure of intrinsic magnetic topological insulator MnBi2Te4 quantum wires
- Tunable phononic coupling in excitonic quantum emitters