A substitutional quantum defect in WS discovered by high-throughput computational screening and fabricated by site-selective STM manipulation
arXiv:2309.08032 · doi:10.1038/s41467-024-47876-3
Abstract
Point defects in two-dimensional materials are of key interest for quantum information science. However, the space of possible defects is immense, making the identification of high-performance quantum defects extremely challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS, which present localized levels in the band gap that can lead to bright optical transitions in the visible or telecom regime. Our computed database spans more than 700 charged defects formed through substitution on the tungsten or sulfur site. We found that sulfur substitutions enable the most promising quantum defects. We computationally identify the neutral cobalt substitution to sulfur (Co) as very promising and fabricate it with scanning tunneling microscopy (STM). The Co electronic structure measured by STM agrees with first principles and showcases an attractive new quantum defect. Our work shows how HT computational screening and novel defect synthesis routes can be combined to design new quantum defects.
References in corpus (17)
- Experimental loophole-free violation of a Bell inequality using entangled electron spins separated by 1.3 km
- Realization of Quantum Spin Hall State in Monolayer 1T'-WTe2
- A robust, scanning quantum system for nanoscale sensing and imaging
- Realization of a multi-node quantum network of remote solid-state qubits
- Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout
- Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
- Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride
- Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2
- Observation of Topologically Protected States at Crystalline Phase Boundaries in Single-layer WSe2
- How Substitutional Point Defects in Two-Dimensional WS Induce Charge Localization, Spin-Orbit Splitting, and Strain
- Electrically driven photon emission from individual atomic defects in monolayer WS2
- Self-consistent potential correction for charged periodic systems
- Antisite defect qubits in monolayer transition metal dichalcogenides
- Origin of the Counterintuitive Dynamic Charge in the Transition-Metal Dichalcogenides
- Vibronic response of a spin-1/2 state from a carbon impurity in two-dimensional WS
- Localization of electronic states in III-V semiconductor alloys: a comparative study
- Autonomous Investigations over WS and Au{111} with Scanning Probe Microscopy
Cited by in corpus (6)
- Machine-learning structural reconstructions for accelerated point defect calculations
- Creation and Microscopic Origins of Single-Photon Emitters in Transition Metal Dichalcogenides and Hexagonal Boron Nitride
- Approximate Excited-State Potential Energy Surfaces for Defects in Solids
- First-principles computational methods for quantum defects in two-dimensional materials: A perspective
- NV-like Defects More Common Than Four-Leaf Clovers: A Perspective on High-Throughput Point Defect Data
- Computation of the expectation value of the spin operator for the Spin-Flip Bethe-Salpeter Equation