NV-like Defects More Common Than Four-Leaf Clovers: A Perspective on High-Throughput Point Defect Data

Abstract

Point defects for quantum technologies is an emerging research area, with the nitrogen-vacancy (NV) center in diamond at the forefront. However, how rare are defects with NV-like properties? In this perspective, I highlight the results of NV-like defects across 33 different materials, revealing that they are more common than finding four-leaf clovers. I also discuss expanding the search criteria to identify other defects relevant to quantum technologies. Utilizing point defect databases will be instrumental in assisting researchers in discovering previously unexplored defects suitable for quantum technologies.

Perspective Article

References in corpus (19)

• The nitrogen-vacancy colour centre in diamond
• Quantum computing with defects
• Polytype control of spin qubits in silicon carbide
• First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centre
• Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
• Quantum well stabilized point defect spin qubits
• First principles predictions of magneto-optical data for semiconductor defects: the case of divacancy defects in 4H-SiC
• Developments and applications of the OPTIMADE API for materials discovery, design, and data exchange
• A substitutional quantum defect in WS${}_2$ discovered by high-throughput computational screening and fabricated by site-selective STM manipulation
• Unveiling the complex structure-property correlation of defects in 2D materials based on high throughput datasets
• Group III Quantum Defects in Diamond are Stable Spin-1 Color Centers
• ADAQ: Automatic workflows for magneto-optical properties of point defects in semiconductors
• Theoretical polarization of zero phonon lines in point defects
• Exhaustive characterization of modified Si vacancies in 4H-SiC
• Absorption $\text{versus}$ Adsorption: High-Throughput Computation of Impurities in 2D Materials
• Discovery of Atomic Clock-Like Spin Defects in Simple Oxides from First Principles
• The Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission
• Na in Diamond: High Spin Defects Revealed by the ADAQ High-Throughput Computational Database
• Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC