Valley splitting by extended zone effective mass approximation incorporating strain in silicon

Abstract

Silicon metal-oxide-semiconductor field effect transistors (MOSFETs) fabricated on a SIMOX (001) substrate, which is a kind of silicon on insulator (SOI) substrate, that is annealed at high temperature for a long time are known to exhibit large valley splitting, but the origin of this splitting has long been unknown. Extended zone effective-mass approximation (EMA) predicts that strain significantly affects valley splitting. In this study, we analyzed valley splitting based on this theory and found that the shear strain along <110> of approximately 5% near the buried oxide (BOX) interface is a promising source for large valley splitting.

arXiv comment12 pages, 5 figures,

References in corpus (12)

• Silicon Quantum Electronics
• Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells
• Valley Polarization in Si(100) at Zero Magnetic Field
• Physical mechanisms of interface-mediated intervalley coupling in Si
• Intervalley coupling for interface-bound electrons in silicon: An effective mass study
• Extended interface states enhance valley splitting in Si/SiO2
• Enhanced Valley Splitting in Si Layers with Oscillatory Ge Concentration
• Spin-Valley Qubit Dynamics In Exchange Coupled Silicon Quantum Dots
• Origin of giant valley splitting in silicon quantum wells induced by superlattice barriers
• Valley splitting in silicon from the interference pattern of quantum oscillations
• Valley-Free Silicon Fins Caused by Shear Strain
• Splitting Valleys in Si/SiO${}_2$: Identification and Control of Interface States

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