92 citations · 211 across the 8 of their papers we have counts for
8 papers
Scalable Parallel Single-Electron Pumps in Silicon with Split-Source Control in the Nanoampere Regime
Gento Yamahata, Takase Shimizu, Katsuhiko Nishiguchi +1
Parallelizing single-electron pumps offers a promising route to achieving nanoampere-level currents crucial for quantum current standard applications. Achieving such current levels…
Valley splitting by extended zone effective mass approximation incorporating strain in silicon
Jinichiro Noborisaka, Toshiaki Hayashi, Akira Fujiwara +1
Silicon metal-oxide-semiconductor field effect transistors (MOSFETs) fabricated on a SIMOX (001) substrate, which is a kind of silicon on insulator (SOI) substrate, that is anneale…
Water Electrolysis and Energy Harvesting with 0D Ion-Sensitive Field-Effect Transistors
N. Clement, K. Nishiguchi, J. F. Dufreche +3
The relationship of the gas bubble size to the size distribution critically influences the effectiveness of electrochemical processes. Several optical and acoustical techniques hav…
Large array of sub-10 nm single-grain Au nanodots for use in nanotechnology
N. Clement, G. Patriarche, K. Smaali +5
A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing…
Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel
Nicolas Clement, Katsuhiko Nishiguchi, Akira Fujiwara +1
An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However,…
One-by-one trap activation in silicon nanowire transistors
N. Clement, K. Nishiguchi, A. Fujiwara +1
Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an e…