Resonant escape over an oscillating barrier in single-electron ratchet transfer
arXiv:1002.2422 · doi:10.1103/PhysRevB.82.033303
Abstract
Single-electron escape from a metastable state over an oscillating barrier is experimentally investigated in silicon-based ratchet transfer. When the barrier is oscillating on a time scale characteristic of the single-electron escape, synchronization occurs between the deterministic barrier modulation and the stochastic escape events. The average escape time as a function of its oscillation frequency exhibits a minimum providing a primary signature for resonant activation of single electrons.
4 pages, 5 figures
References in corpus (3)
Cited by in corpus (9)
- Phase dynamics in graphene-based Josephson junctions in the presence of thermal and correlated fluctuations
- Switching times in long-overlap Josephson junctions subject to thermal fluctuations and non-Gaussian noise sources
- Effects of Lévy noise on the dynamics of sine-Gordon solitons in long Josephson junctions
- Evidence for universality of tunable-barrier electron pumps
- Lévy noise effects on Josephson junctions
- Quantum resonant activation
- Realization of all logic gates and memory latch in the SC-CNN cell of the simple nonlinear MLC circuit
- Magnetic quantum ratchet effect in Si-MOSFETs
- Focusing in Multiwell Potentials: Applications to Ion Channels